Kiichi Tachi

Comparison of low-temperature electrical characteristics of gate-all-around nanowire FETs, Fin FETs and fully-depleted SOI FETs

Sorin Cristoloveanu, Thomas Ernst, Hiroshi Iwai, 2011, Microelectron. Reliab..

Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La2O3 gate dielectrics

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2010, Microelectron. Reliab..

SrO capping effect for La2O3/Ce-silicate gate dielectrics

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2010, Microelectron. Reliab..

Memory system for restraining threshold variation to improve data reading

Tsukasa Tokutomi, Yoshihisa Kojima, Kiichi Tachi, 2018 .