Anant Agarwal

Design Strategies for Rugged SiC Power Devices

Susanna Yu, Tianshi Liu, Arash Salemi, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

Non-Isothermal Simulations to Optimize SiC MOSFETs for Enhanced Short-Circuit Ruggedness

Dongyoung Kim, Robert Kaplar, Woongje Sung, 2020, 2020 IEEE International Reliability Physics Symposium (IRPS).

Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.

Marek Skowronski, Anant Agarwal, James A. Cooper, 2001 .

4H-SiC bipolar junction transistors: From research to development - A case study: 1200 V, 20 A, stable SiC BJTs with high blocking yield

John Palmour, Robert Callanan, Anant Agarwal, 2009, 2009 21st International Symposium on Power Semiconductor Devices & IC's.

SiC symmetric blocking terminations using orthogonal positive bevel termination and Junction Termination Extension

Alex Q. Huang, Lin Cheng, B. Jayant Baliga, 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

20 kV 4H-SiC N-IGBTs

Subhashish Bhattacharya, Arun Kadavelugu, John W. Palmour, 2014 .

3.7 mΩ-cm2, 1500 V 4H-SiC DMOSFETs for advanced high power, high frequency applications

Lin Cheng, Sei-Hyung Ryu, John Palmour, 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.

CPWR-AN 02 Rev-600 V , 1-40 A , Schottky Diodes in SiC and Their Applications

Sei-Hyung Ryu, John Palmour, Anant Agarwal, 2003 .

Advances in silicon carbide processing and applications

Stephen E. Saddow, Anant Agarwal, S. Saddow, 2004 .

Progress in Silicon Carbide Power Devices

Brett Hull, John Palmour, Mrinal Das, 2006, 2006 64th Device Research Conference.

High-frequency design considerations of dual active bridge 1200 V SiC MOSFET DC-DC converter

Subhashish Bhattacharya, Seunghun Baek, Arun Kadavelugu, 2011, 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).