V. Afanas’ev

发表

Can silicon behave like graphene? A first-principles study

Andre Stesmans, Geoffrey Pourtois, Michel Houssa, 2010 .

Band offsets and electronic structure of SiC/SiO2 interfaces

Max J. Schulz, M. Bassler, M. Schulz, 1996 .

Band alignment and electron traps in Y2O3 layers on "100…Si

J. Kittl, C. Adelmann, A. Stesmans, 2009 .

Relationship between oxide density and charge trapping in SiO2 films

A. Stesmans, P. McMarr, R. Lawrence, 1999 .

Electron energy barriers between (100)Si and ultrathin stacks of SiO2, Al2O3, and ZrO2 insulators

A. Stesmans, M. Heyns, M. Houssa, 2001 .

First-principles study of strained 2D MoS2

G. Pourtois, A. Stesmans, M. Houssa, 2012 .

Trap-assisted tunneling in high permittivity gate dielectric stacks

A. Stesmans, M. Heyns, M. Houssa, 2000 .

Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs

T. Schram, G. Kar, B. Kaczer, 2023, 2023 IEEE International Reliability Physics Symposium (IRPS).

Band alignment at interfaces of amorphous Al2O3 with Ge1−xSnx- and strained Ge-based channels

C. Merckling, A. Stesmans, R. Loo, 2014 .

Electronic structure of the interface of aluminum nitride with Si(100)

A. Stesmans, V. Afanas'ev, Chao Zhao, 2008 .

Elimination of SiC/SiO2 interface states by preoxidation ultraviolet‐ozone cleaning

Andre Stesmans, Max J. Schulz, Christopher Harris, 1996 .

Interactions of hydrogen with amorphous hafnium oxide

Alexander L. Shluger, A. Shluger, M. Kaviani, 2017 .

Shallow electron traps at the 4H–SiC/SiO2 interface

Andre Stesmans, Max J. Schulz, M. Bassler, 2000 .

Defect Generation in Ultrathin SiON / ZrO2 Gate Dielectric Stacks

A. Stesmans, M. Heyns, M. Houssa, 2002 .

Defect profiling in FEFET Si:HfO2 layers

R. Degraeve, S. Clima, D. Linten, 2020 .

Universal Non-Polar Switching in Carbon-doped Transition Metal Oxides (TMOs) and Post TMOs

L. Shifren, G. Yeric, C. Araujo, 2022, 2204.07656.

Band alignments in metal–oxide–silicon structures with atomic-layer deposited Al2O3 and ZrO2

A. Stesmans, M. Heyns, M. Houssa, 2002 .

A. Stesmans, V. Afanas’ev, 2005 .

Paramagnetic defects in annealed ultrathin layers of SiOx, Al2O3, and ZrO2 on (100)Si

A. Stesmans, V. Afanas’ev, 2004 .

Defects at the interface of (100)Si with ultrathin layers of SiOx, Al2O3, and ZrO2 probed by electron spin resonance

A. Stesmans, V. Afanas'ev, V. Afanas’ev, 2002 .

Valence-band electron-tunneling measurement of the gate work function: Application to the high-κ/polycrystalline-silicon interface

G. Pourtois, L. Pantisano, V. Afanas'ev, 2005 .

Stable trapping of electrons and holes in deposited insulating oxides: Al2O3, ZrO2, and HfO2

A. Stesmans, V. Afanas'ev, V. Afanas’ev, 2004 .

Tuning the spin texture of graphene with size-specific Cu n clusters: a first-principles study

M. Houssa, E. Janssens, V. Afanas'ev, 2023, Journal of Physics: Materials.

Impact of annealing-induced compaction on electronic properties of atomic-layer-deposited Al2O3

A. Stesmans, B. Mrstik, V. Afanas'ev, 2002 .

Hole-Doped 2D InSe for Spintronic Applications

A. Stesmans, M. Houssa, V. Afanas'ev, 2018, ACS Applied Nano Materials.

Band alignment between (100)Si and complex rare earth∕transition metal oxides

A. Stesmans, Y. Jia, M. Caymax, 2004 .

Ge dangling bonds at the (100)Ge/GeO2 interface and the viscoelastic properties of GeO2

G. Pourtois, A. Stesmans, M. Caymax, 2008 .

Energy band alignment at the (100)Ge/HfO2 interface

A. Stesmans, V. Afanas’ev, 2004 .

Variation in the fixed charge density of SiOx/ZrO2 gate dielectric stacks during postdeposition oxidation

A. Stesmans, M. Heyns, M. Houssa, 2000 .

SiC/SiO2 interface-state generation by electron injection

A. Stesmans, M. Schulz, G. Pensl, 1999 .

Electrical properties of silicon carbide polytypes

M. Bassler, Wolfgang J. Choyke, M. Maier, 1996 .

Energy distribution of the (100)Si/HfO2 interface states

A. Stesmans, Y. Fedorenko, L. Truong, 2004 .

Valence band offset and hole injection at the 4H-, 6H-SiC/SiO2 interfaces

A. Stesmans, V. Afanas'ev, V. Afanas’ev, 2000 .

Electron spin resonance features of the Ge Pb1 dangling bond defect in condensation-grown (100)Si/SiO2/Si1−xGex/SiO2 heterostructures

A. Stesmans, L. Souriau, V. Afanas'ev, 2012 .

Observation of a P-associated defect in HfO2 nanolayers on (100)Si by electron spin resonance

A. Stesmans, K. Clémer, V. Afanas’ev, 2007 .

Charge state of paramagnetic E´ centre in thermal SiO2 layers on silicon

A. Stesmans, V. Afanas'ev, V. Afanas’ev, 2000 .

Electronic properties of hydrogenated silicene and germanene

K. Sankaran, G. Pourtois, A. Stesmans, 2011 .

Hydrogen interaction kinetics of Ge dangling bonds at the Si0.25Ge0.75/SiO2 interface

A. Stesmans, V. Afanas'ev, T. N. Hoang, 2014 .

Photocharging Technique for Barrier Determination on Semiconductor-Insulator Interfaces

V. K. Adamchuk, V. Afanas'ev, V. Afanas'ev, 1992 .

H-complexed oxygen vacancy in SiO2: Energy level of a negatively charged state

Andre Stesmans, A. Stesmans, Valeri Afanas'ev, 1997 .

Electron band alignment at the interface of (100)GaSb with molecular-beam deposited Al2O3

C. Merckling, A. Stesmans, V. Afanas'ev, 2011 .

Charge Properties of Paramagnetic Defects in Semiconductor/Oxide Structures

A. Stesmans, M. Houssa, V. Afanas'ev, 2014 .

Are intrinsic point defects inadequate as the origin of optical band gap narrowing in fumed silica nanoparticles?

A. Stesmans, K. Clémer, V. Afanas'ev, 2005 .

Paramagnetic point defects at interfacial layers in biaxial tensile strained (100)Si/SiO2

Cor Claeys, Eddy Simoen, Andre Stesmans, 2008 .

Internal photoemission of electrons from Ta-based conductors into SiO2 and HfO2 insulators

T. Schram, A. Stesmans, L. Pantisano, 2008 .

Determination of interface energy band diagram between (100)Si and mixed Al-Hf oxides using internal electron photoemission

Andre Stesmans, Wilman Tsai, A. Stesmans, 2003 .

Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations

Andre Stesmans, Apurba Laha, Andreas Fissel, 2007 .