K. S. Davydovskaya

Impact of high temperature electron irradiation on characteristics of power SiC Schottky diodes

M. Levinshtein, A. Lebedev, V. Yuferev, 2021 .

Effect of high temperature irradiation with 15 MeV protons on characteristics of power SiC Schottky diodes

M. Levinshtein, A. Lebedev, A. Ivanov, 2021 .

Effect of the Electron-Irradiation Temperature on the Formation of Radiation Defects in Silicon Carbide

A. Lebedev, V. Kozlovski, A. Vasil’ev, 2023, Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques.

Galvanic and Capacitive Effects in n-SiC Conductivity Compensation by Radiation-Induced Defects

A. Lebedev, V. Kozlovski, Yu. V. Lyubimova, 2018, Semiconductors (Woodbury, N.Y.).

Annealing High-Voltage 4H-SiC Schottky Diodes Irradiated with Electrons at a High Temperature

D. A. Malevsky, M. Levinshtein, A. Lebedev, 2022, Semiconductors.

Radiation resistance of 4H-SiC Schottky diodes under irradiation with 0.9-MeV electrons

A. Lebedev, V. Kozlovski, A. M. Strelchuk, 2017, Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques.