Naoki Fujimoto

发表

Tungsten carbide layers deposited on graphite substrates via a wet powder process as anti-parasitic-reaction coatings for reactor components in GaN growth

H. Amano, S. Nitta, D. Nakamura, 2020 .

Computational fluid dynamics simulation study of the gas flow balance in a vertical HVPE reactor with a showerhead for low cost bulk GaN crystal growth

H. Amano, S. Nitta, Qiang Liu, 2019, Japanese Journal of Applied Physics.

Determination of critical micelle concentration of several nonionic surfactants by azo-hydrazone tautomerism of anionic dye

N. Kawashima, K. Meguro, N. Fujimoto, 1985 .

Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates

Kazuyoshi Iida, Masataka Imura, Motoaki Iwaya, 2006 .

Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio

S. Kamiyama, H. Amano, I. Akasaki, 2007 .

High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio

S. Kamiyama, H. Amano, I. Akasaki, 2006 .

Tuning the p-type doping of GaN over three orders of magnitude via efficient Mg doping during halide vapor phase epitaxy

H. Amano, S. Nitta, N. Fujimoto, 2022, Journal of Applied Physics.

Vertical GaN p+-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy

H. Amano, S. Nitta, N. Fujimoto, 2021, Applied Physics Letters.

Electrical properties and structural defects of p-type GaN layers grown by halide vapor phase epitaxy

H. Amano, S. Nitta, N. Fujimoto, 2021, Journal of Crystal Growth.

Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO

H. Amano, S. Nitta, N. Fujimoto, 2020, Applied Physics Express.

Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2007 .

Magnetostriction of Ni2Mn1−xCrxGa Heusler Alloys

N. Fujimoto, T. Kanomata, T. Sakon, 2017 .

Magnetostriction of Ni 2 Mn 1 − x Cr x Ga Heusler Alloys

N. Fujimoto, T. Kanomata, T. Sakon, 2017 .

Ammonia decomposition and reaction by high-resolution mass spectrometry for group III – Nitride epitaxial growth

H. Amano, M. Pristovsek, S. Nitta, 2019, Journal of Crystal Growth.

Surface Kinetics in Halide Vapor Phase Epitaxial Growth of Gan Layers on Gan (0001) Freestanding Substrates

H. Amano, S. Nitta, Y. Honda, 2022, SSRN Electronic Journal.

Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2007 .