Yu-Lin Chen

Investigation of AlGaN/GaN HEMT Breakdown analysis with Source field plate length for High power applications

Arivazhagan L, Godfrey D, D Nirmal, 2020, 2020 5th International Conference on Devices, Circuits and Systems (ICDCS).

Study on interfacial trap location induced subthreshold slope degradation extracted by random telegraph noise for high-k/metal gate FinFET devices

W. Yeh, Wenqi Zhang, Yi-Lin Yang, 2020 .

Current collapse degradation in GaN High Electron Mobility Transistor by virtual gate

D. Nirmal, D. Godfrey, L. Arivazhagan, 2021, Microelectron. J..