K. Lai

Critical Process Features Enabling Aggressive Contacted Gate Pitch Scaling for 3nm CMOS Technology and Beyond

C. O. Chui, M. Chiang, J. Liaw, 2022, 2022 International Electron Devices Meeting (IEDM).

A 7nm CMOS platform technology featuring 4th generation FinFET transistors with a 0.027um2 high density 6-T SRAM cell for mobile SoC applications

C.C. Chen, Shien-Yang Wu, S.Y. Chang, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

A 3nm CMOS FinFlex™ Platform Technology with Enhanced Power Efficiency and Performance for Mobile SoC and High Performance Computing Applications

Shien-Yang Wu, M. Chiang, V. Chang, 2022, 2022 International Electron Devices Meeting (IEDM).