R. Jordan

发表

Scaled Submicron Field-Plated Enhancement Mode High-K Gallium Nitride Transistors on 300mm Si(111) Wafer with Power FoM (RON xQGG) of 3.1 mohm-nC at 40V and fT/fMAX of 130/680GHz

M. Radosavljevic, H. Then, I. Ban, 2022, 2022 International Electron Devices Meeting (IEDM).

Enhancement-Mode 300-mm GaN-on-Si(111) With Integrated Si CMOS for Future mm-Wave RF Applications

M. Radosavljevic, H. Then, I. Ban, 2023, IEEE Microwave and Wireless Technology Letters.