Mizue Ishikawa

High-Speed Voltage-Control Spintronics Memory (High-Speed VoCSM)

Shinobu Fujita, Hiroaki Yoda, Yuichi Ohsawa, 2017, 2017 IEEE International Memory Workshop (IMW).

Reconfigurable characteristics of spintronics-based MOSFETs for nonvolatile integrated circuits

Takao Marukame, Tetsufumi Tanamoto, Tomoaki Inokuchi, 2010, 2010 Symposium on VLSI Technology.

High-speed voltage-control spintronics memory focused on reduction in write current

Yuichi Kato, Hiroaki Yoda, Yuichi Ohsawa, 2017, 2017 17th Non-Volatile Memory Technology Symposium (NVMTS).

Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height

Hiroaki Yoda, Yuichi Ohsawa, Naoharu Shimomura, 2017 .

Room temperature observation of high spin polarization in post annealed Co2FeSi/MgO/n+-Si on insulator devices

Nobuki Tezuka, Tomoaki Inokuchi, Hideyuki Sugiyama, 2017 .

Spin relaxation through lateral spin transport in heavily doped n -type silicon

Yuichi Fujita, Yoshiaki Saito, Mizue Ishikawa, 2017 .

Electrical Spin Injection into n-GaAs Channels and Detection through MgO/CoFeB Electrodes

Tomoaki Inokuchi, Hideyuki Sugiyama, Yoshiaki Saito, 2009 .

Spin transport and accumulation in n+-Si using Heusler compound Co2FeSi/MgO tunnel contacts

Tomoaki Inokuchi, Hideyuki Sugiyama, Yoshiaki Saito, 2015 .

Read/write operation of spin-based MOSFET using highly spin-polarized ferromagnet/MgO tunnel barrier for reconfigurable logic devices

Tomoaki Inokuchi, Hideyuki Sugiyama, Yoshiaki Saito, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).