V. Reddy

发表

Microstructural studies of e-beam evaporated alumina thin films

V. R. Reddy, S. Basavaraja, A. Dey, 2014 .

Electrical characterization of Au/n-GaN metal–semiconductor and Au/SiO2/n-GaN metal–insulator–semiconductor structures

V. R. Reddy, Arvind Kumar, M. S. Reddy, 2011 .

Temperature-Dependent Electrical Properties and Carrier Transport Mechanisms of TMAH-Treated Ni/Au/Al2O3/GaN MIS Diode

V. R. Reddy, Jung-Hee Lee, Chinho Park, 2016, Journal of Electronic Materials.

Thermal stability of high-k Er-silicate gate dielectric formed by interfacial reaction between Er and SiO2 films

Chel-Jong Choi, H. Hong, S. J. Chandra, 2008 .

The effect of annealing temperature on electrical and structural properties of Rh/Au Schottky contacts to n-type GaN

Chel-Jong Choi, N. Reddy, V. Reddy, 2006 .

Structural and electrical properties of Mo/n‐GaN Schottky diodes

V. R. Reddy, Chel-Jong Choi, C. Ramesh, 2006 .

Broadband photodetector based on MoS2/Ge heterojunction for optoelectronic applications

V. R. Reddy, Chel-Jong Choi, Dong-Ho Kim, 2022, Vacuum.

Surface chemical states, electrical and carrier transport properties of Au/ZrO2/n-GaN MIS junction with a high-k ZrO2 as an insulating layer

V. R. Reddy, C. Prasad, V. Reddy, 2018 .

Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes

V. R. Reddy, Jue Tang, A. Kandasami, 2020, Materials.

Electrical and carrier transport properties of Ti/α-amylase/p-InP MPS junction with a α-amylase polymer interlayer

V. R. Reddy, Chel-Jong Choi, V. Janardhanam, 2021, Journal of Materials Science: Materials in Electronics.

Electrical properties and the double Gaussian distribution of inhomogeneous barrier heights in Se/n-GaN Schottky barrier diode

V. R. Reddy, Chel-Jong Choi, V. Janardhanam, 2014 .

Electrical properties and the role of inhomogeneities at the polyvinyl alcohol/n‐inp schottky barrier interface

V. R. Reddy, Jung-Hee Lee, M. S. Reddy, 2014 .

Barrier characteristics of Pt/Ru Schottky contacts on n-type GaN based on I–V–T and C–V–T measurements

V. R. Reddy, N. Reddy, V. Reddy, 2012, Bulletin of Materials Science.

Electrical transport characteristics of Ni/Pd/n-GaN Schottky barrier diodes as a function of temperature

V. R. Reddy, Anil Kumar, Arvind Kumar, 2011 .

AC IMPEDANCE SPECTROSCOPY STUDIES ON Ni DOPED CdS NANOPARTICLES PREPARED BY CHEMICAL CO-PRECIPITATION METHOD

B. Kumar, B. S. Rao, G. V. Chalapathi, 2012 .

Microstructural, electrical and carrier transport properties of Au/NiO/n-GaN heterojunction with a nickel oxide interlayer

V. R. Reddy, Chel-Jong Choi, I. N. Reddy, 2016 .

Influence of tetramethylammonium hydroxide treatment on the electrical characteristics of Ni/Au/GaN Schottky barrier diode

V. R. Reddy, Jung-Hee Lee, M. S. Reddy, 2014 .

Pulsed rf magnetron sputtered alumina thin films

V. R. Reddy, P. Bandyopadhyay, S. Basavaraja, 2014 .

Effect of ITO buffer layers on the structural, optical and electrical properties of ZnO multilayer thin films prepared by pulsed laser deposition technique

A. P. Detty, K. J. Lethy, V. R. Reddy, 2010 .

Electrical characteristics of ZrN metallised metal-oxide-semiconductor and metal-insulator-metal devices

H. B. Bhuvaneswari, G. M. Rao, V. R. Reddy, 2006 .

Modification of Schottky barrier properties of Al/p-type Si Schottky rectifiers with graphene-oxide-doped poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) interlayer

V. R. Reddy, Chel-Jong Choi, H. Yun, 2017 .

Electrical properties of Au/polyvinylidene fluoride/n-InP Schottky diode with polymer interlayer

V. R. Reddy, V. Reddy, 2014 .

Influence of Series Resistance and Interface State Density on Electrical Characteristics of Ru/Ni/n-GaN Schottky structure

Jung-Hee Lee, Dong-Seok Kim, V. Rajagopal Reddy, 2013 .

Effect of annealing on the electronic parameters of Au/poly(ethylmethacrylate)/n-InP Schottky diode with organic interlayer

V. R. Reddy, A. Umapathi, L. Rao, 2013 .

Analysis of electrical characteristics of Er/p-InP Schottky diode at high temperature range

V. R. Reddy, Chel-Jong Choi, Arvind Kumar, 2013 .

Effect of annealing temperature on electrical properties of Au/polyvinyl alcohol/n-InP Schottky barrier structure

V. R. Reddy, Chel-Jong Choi, Arunandan Kumar, 2012 .

Influence of rapid thermal annealing on electrical and structural properties of double metal structure Au/Ni/n-InP (111) diodes

V. R. Reddy, V. Janardhanam, A. Kumar, 2010 .

Electrical Properties of Rapidly Annealed Ir and Ir/Au Schottky Contacts on n-Type InGaN

R. Padma, V. Reddy, B. Prasanna Lakshmi, 2012 .

Influence of annealing on structural and electrical properties of double metal structure Ru/Cu contacts on n‐type InP

V. R. Reddy, Chel-Jong Choi, I. Jyothi, 2012 .

Structural, electrical, and surface morphological characteristics of rapidly annealed Pt/Ti Schottky contacts to n‐type InP

Chel-Jong Choi, S. Naik, D. Reddy, 2011 .

Effect of copper phthalocyanine (CuPc) interlayer on the electrical characteristics of Au/n-GaN Schottky rectifier

Chel-Jong Choi, Kwang-soon Ahn, Y. Lim, 2015 .

Ar Ion Irradiation Effects on the Characteristics of Ru|Pt|n-GaN Schottky Barrier Diodes

V. R. Reddy, Krishnaveni Sannathammegowda, S. Kumar, 2020, Semiconductors.

Modified electrical characteristics of Pt/n-type Ge Schottky diode with a pyronine-B interlayer

V. R. Reddy, Chel-Jong Choi, V. Janardhanam, 2014 .

Electrical Properties of Pt/n-Ge Schottky Contact Modified Using Copper Phthalocyanine (CuPc) Interlayer

V. R. Reddy, Chel-Jong Choi, Arvind Kumar, 2011 .

Electrical and frequency-dependent properties of Au/Sm 2 O 3 /n-GaN MIS junction with a high-k rare-earth Sm 2 O 3 as interlayer

V. R. Reddy, Chel-Jong Choi, V. Janardhanam, 2017 .

Double Gaussian Distribution of Barrier Heights, Interface States, and Current Transport Mechanisms in Au/Bi0.5Na0.5TiO3-BaTiO3/n-GaN MIS Structure

Chel-Jong Choi, V. Janardhanam, V. Rajagopal Reddy, 2014, Journal of Electronic Materials.

Electrical parameters and series resistance analysis of Au/Y/p-InP/Pt Schottky barrier diode at room temperature

V. R. Reddy, L. Rao, V. Reddy, 2016 .

Study of metal–insulator like transition in Co1−xFe V. R. Reddy, S. Karmakar, A. Gome, 2022, Physica B: Condensed Matter.

Effect of oxygen plasma treatment on the electrical characteristics of Pt/n-type Si Schottky diodes

Chel-Jong Choi, V. Janardhanam, Sungnam Lee, 2016 .

Electrical and structural properties of low-resistance Pt/Ag/Au ohmic contacts to p-type GaN

V. R. Reddy, Chel-Jong Choi, N. Reddy, 2005 .

Dopant-induced red emission, paramagnetism, and hydrogen evolution of diluted magnetic semiconductor ZnS: Eu nanoparticles

S. An, Kwi‐Il Park, Young Lae Kim, 2023, Korean Journal of Chemical Engineering.

XPS study of sputtered alumina thin films

V. R. Reddy, A. Dey, P. Bera, 2014 .