Richard Lossy

Reliability studies on GaN HEMTs with sputtered Iridium gate module

Hervé Blanck, Joachim Würfl, Richard Lossy, 2012, Microelectron. Reliab..

Reliability Investigation of Gallium Nitride HEMT

V. Hoel, Christian Dua, Joachim Würfl, 2004, Microelectron. Reliab..

Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements

Christian Boit, Günther Tränkle, Joachim Würfl, 2011, Microelectron. Reliab..

New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100 nm scale unpassivated regions around the gate periphery

Christian Boit, Günther Tränkle, Anna Mogilatenko, 2014, Microelectron. Reliab..

Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures

Christian Boit, Piotr Laskowski, Günther Tränkle, 2009, Microelectron. Reliab..

Reliability issues of GaN based high voltage power devices

Frank Brunner, Matthias Schulz, Joachim Würfl, 2011, Microelectron. Reliab..

2 MeV ion irradiation effects on AlGaN/GaN HFET devices

Frank Brunner, M. Weyers, Günther Tränkle, 2008 .

Influence of GaN cap on robustness of AlGaN/GaN HEMTs

Christian Boit, Joachim Wurfl, Arkadiusz Glowacki, 2009, 2009 IEEE International Reliability Physics Symposium.

Highly linear broadband GaN-based low-noise amplifier

Matthias Rudolph, Wolfgang Heinrich, Armin Liero, 2010, German Microwave Conference Digest of Papers.