M. Watanabe

发表

Interface properties for GaAs/InGaAlP heterojunctions by the capacitance‐voltage profiling technique

Miyoko O. Watanabe, Yasuo Ohba, Y. Ohba, 1987 .

On the determination of the spatial distribution of deep centers in semiconducting thin films from capacitance transient spectroscopy

Miyoko O. Watanabe, Yasuhito Zohta, Y. Zohta, 1982 .

AsH3 to Ga(CH3)3 Mole Ratio Dependence of Dominant Deep Levels in MOCVD GaAs

Miyoko O. Watanabe, A. Tanaka, Y. Zohta, 1983 .

Japan Science and Technology Agency

Miyoko O. Watanabe, M. Watanabe, 2018, Impact.

Band discontinuity for GaAs/AlGaAs heterojunction determined by C‐V profiling technique

Miyoko O. Watanabe, M. Mashita, T. Nakanisi, 1985 .

Hole generation by icosahedral B12 in high‐dose boron as‐implanted silicon

Miyoko O. Watanabe, A. Murakoshi, M. Yoshiki, 1993 .

A Tip Approach System for a Scanning Tunneling Microscope Using an Inchworm

Kuniyoshi Tanaka, M. Watanabe, Kuroda Tatsuaki, 1993 .

DLTS Study of RIE-Induced Deep Levels in Si Using p+n Diode Arrays

Miyoko O. Watanabe, M. Taguchi, Y. Zohta, 1983 .

Se‐related deep levels in InGaAlP

Miyoko O. Watanabe, Y. Ohba, M. Watanabe, 1986 .

Effects of the Growth Conditions on Deep Level Concentration in MOCVD GaAs

Miyoko O. Watanabe, A. Tanaka, T. Nakanisi, 1981 .

Donor Levels in Si-Doped AlGaAs Grown by MBE

Miyoko O. Watanabe, Masao Mashita, Kouhei Morizuka, 1984 .

Electrical properties of BC2N thin films prepared by chemical vapor deposition

Miyoko O. Watanabe, S. Itoh, K. Mizushima, 1995 .

Growth Condition Independence Observed for DX Center in Si-doped AlGaAs Grown by Molecular Beam Epitaxy

Miyoko O. Watanabe, Y. Ashizawa, M. Watanabe, 1985 .

Bonding characterization of BC2N thin films

Miyoko O. Watanabe, S. Itoh, K. Mizushima, 1996 .