Andreas Fissel

发表

Epitaxial growth of non-cubic silicon

C. Wang, Andreas Fissel, E. Bugiel, 2005, Microelectron. J..

Integration of low dimensional crystalline Si into functional epitaxial oxides for next generation solar cell application

V. V. Afanasev, Apurba Laha, Andreas Fissel, 2008, 2008 Conference on Optoelectronic and Microelectronic Materials and Devices.

Silicon in functional epitaxial oxides: A new group of nanostructures

M. Czernohorsky, Apurba Laha, Andreas Fissel, 2008, Microelectron. J..

Structural and strain relaxation study of epitaxially grown nano-thick Nd2O3/Si(111) heterostructure

Tianmo Liu, Jinxing Wang, Wolfgang Braun, 2009, 2009 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems.

Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations

Andre Stesmans, Apurba Laha, Andreas Fissel, 2007 .

Crystalline ternary rare earth oxide with capacitance equivalent thickness below 1 nm for high-K application

Apurba Laha, Eberhard Bugiel, Andreas Fissel, 2006 .

Impact of oxygen supply during growth on the electrical properties of crystalline Gd2O3 thin films on Si(001)

M. Czernohorsky, Eberhard Bugiel, Andreas Fissel, 2006 .

Improving dielectric properties of epitaxial Gd2O3 thin films on silicon by nitrogen doping

Andreas Fissel, H. J. Osten, H. Osten, 2013 .

Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties

Andreas Fissel, A. Fissel, 2003 .

Cooperative solid-vapor-phase epitaxy: An approach for fabrication of single-crystalline insulator/Si/insulator nanostructures

Eberhard Bugiel, Andreas Fissel, H. J. Osten, 2006 .

Interface formation during molecular beam epitaxial growth of neodymium oxide on silicon

M. Czernohorsky, Eberhard Bugiel, Andreas Fissel, 2006 .

Towards Quantum Structures in SiC

Friedhelm Bechstedt, Ulrike Grossner, Andreas Fissel, 2002 .

Observation of near interface oxide traps in single crystalline Nd2O3 on Si(111) by quasistatic C-V method

Qing-Qing Sun, Apurba Laha, Shi-Jin Ding, 2008 .

Role of boron and (√3 × √3)‐B surface defects on the growth mode of Si on Si(111): A photoemission and electron diffraction study

Jan Krügener, Andreas Fissel, Dominik Schwendt, 2010 .

Growth of columnar aluminum nitride layers on Si(111) by molecular beam epitaxy

Andreas Fissel, W. Richter, Ute Kaiser, 1997 .

Epitaxial multi-component rare earth oxide for high-K application

Apurba Laha, Eberhard Bugiel, Andreas Fissel, 2007 .

CMOS integration of epitaxial Gd2O3 high-k gate dielectrics

J. K. Efavi, Max C. Lemme, Michael Schmidt, 2006 .