Uddin Bhuiyan

发表

Sub-100 nm {\beta}-Ga2O3 MOSFET with 100 GHz fMAX and>100 V breakdown

U. Singisetti, C. Saha, Hongping Zhao, 2023, 2305.04725.

In situ MOCVD growth and band offsets of Al2O3 dielectric on β-Ga2O3 and β-(AlxGa1−x)2O3 thin films

Jinwoo Hwang, A. Bhuiyan, Hsien-Lien Huang, 2022, Journal of Applied Physics.