Shairfe Muhammad Salahuddin

Underlap engineered eight-transistor SRAM cell for stronger data stability enhanced write ability and suppressed leakage power consumption

Volkan Kursun, Shairfe Muhammad Salahuddin, 2013, 2013 IEEE 20th International Conference on Electronics, Circuits, and Systems (ICECS).

Low-leakage hybrid FinFET SRAM cell with asymmetrical gate overlap / underlap bitline access transistors for enhanced read data stability

Volkan Kursun, Hailong Jiao, Shairfe Muhammad Salahuddin, 2013, 2013 IEEE International Symposium on Circuits and Systems (ISCAS2013).

Asymmetrical FinFET SRAM cells with wider read noise margin and lower leakage currents

Volkan Kursun, Shairfe Muhammad Salahuddin, 2015, TENCON 2015 - 2015 IEEE Region 10 Conference.

Eight-FinFET Fully Differential SRAM Cell With Enhanced Read and Write Voltage Margins

Mansun Chan, Shairfe Muhammad Salahuddin, M. Chan, 2015, IEEE Transactions on Electron Devices.

A novel 6T SRAM cell with asymmetrically gate underlap engineered FinFETs for enhanced read data stability and write ability

Volkan Kursun, Hailong Jiao, Shairfe Muhammad Salahuddin, 2013, International Symposium on Quality Electronic Design (ISQED).

Thermal Stress-Aware CMOS–SRAM Partitioning in Sequential 3-D Technology

Hao Yu, Julien Ryckaert, Alessio Spessot, 2020, IEEE Transactions on Electron Devices.

Data stability and write ability enhancement techniques for FinFET SRAM circuits

Volkan Kursun, Shairfe Muhammad Salahuddin, 2016 .

Write Assist SRAM Cell with Asymmetrical Bitline Access Transistors for Enhanced Data Stability and Write Ability

Volkan Kursun, Shairfe Muhammad Salahuddin, 2016, J. Circuits Syst. Comput..

High-speed and low-leakage FinFET SRAM cell with enhanced read and write voltage margins

Volkan Kursun, Shairfe Muhammad Salahuddin, 2014, 2014 International Symposium on Integrated Circuits (ISIC).

Characterization of FinFET SRAM cells with asymmetrically gate underlapped bitline access transistors under process parameter fluctuations

Volkan Kursun, Hailong Jiao, Shairfe Muhammad Salahuddin, 2013, 2013 IEEE International Conference of Electron Devices and Solid-state Circuits.

FinFET SRAM Cells with Asymmetrical Bitline Access Transistors for Enhanced Read Stability

Volkan Kursun, Hailong Jiao, Shairfe Muhammad Salahuddin, 2015 .