Weihao Bian

Effect of HBr additive on the performance of all-inorganic Cs3Bi2Br9 halide perovskite resistive switching memory

J. Chen, L. Kong, Jianping Xu, 2023, Journal of Alloys and Compounds.

Polyethylene-Glycol-Modified Halide Perovskite for Enhancing the Switching Ratio and Cycling Stability of Resistive Random Access Memory.

J. Chen, L. Kong, Jianping Xu, 2023, The journal of physical chemistry letters.