N. Zhang

发表

Recombination Dynamics of InGaN/GaN Multiple Quantum Wells With Different Well Thickness

L. Zhang, X. Wei, J. Wang, 2016 .

Growth and properties of GaN on Si (111) substrates with AlGaN/AlN buffer layer by NH3-GSMBE

H. Liu, J. M. Li, Y. Zeng, 2005 .