T. P. Ma

发表

A new source-side erase algorithm to reduce disturb problem in flash EPROM

C. Chen, T. P. Ma, 1995, 1995 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers.

Mobility and reliability improvements of fluorinated gate oxide for VLSI technology

Hsing-Huang Tseng, A. Balasinski, T. P. Ma, 1995, 1995 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers.

The Use Of Jet-vapor Deposited Silicon Nitride For Scaled Dram Applications

Xin Guo, T. Tamagawa, T. P. Ma, 1997, Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications.

Ultra-thin Nitride/oxide Stack Dielectric Produced By In-situ Jet Vapor Deposition

T. P. Ma, G. J. Cui, X. W. Wang, 1997, Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications.

Investigation of fluorine in SiO2 and on Si surface by the 19F(p,αγ)16O reaction, secondary‐ion mass spectrometry, and x‐ray photoelectron spectroscopy

Seiichi Iwata, Yuzuru Ohji, T. P. Ma, 1990 .

Kilovolt AlGaN/GaN HEMTs as Switching Devices

Umesh K. Mishra, S. P. DenBaars, T. P. Ma, 2001 .

A study of electrically active traps in AlGaN/GaN high electron mobility transistor

Siddharth Rajan, Ting-Hsiang Hung, T. P. Ma, 2013 .

AC transconductance: A novel method to characterize oxide traps in advanced FETs without a body contact

O. Faynot, F. Andrieu, A. Alian, 2012, 2012 International Electron Devices Meeting.

Dielectric characteristics of fluorinated ultradry SiO2

Yu Wang, Yuzuru Ohji, T. P. Ma, 1989 .

Ultra-thin silicon nitride films on Si by jet vapor deposition

T. P. Ma, G. J. Cui, X. W. Wang, 1995, 1995 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers.

Comparison of drive currents in metal-oxide-semiconductor field-effect transistors made of Si, Ge, GaAs, InGaAs, and InAs channels

Sohrab Ismail-Beigi, T. P. Ma, Abigail Lubow, 2010 .

SEB Hardened Power MOSFETs With High-K Dielectrics

En Xia Zhang, Ronald D. Schrimpf, Daniel M. Fleetwood, 2015, IEEE Transactions on Nuclear Science.

Random telegraph signals in small MOSFETs after X-ray irradiation

Hirotaka Muto, T. P. Ma, T. Ma, 1991 .

Electron trapping during high‐field tunneling injection in metal‐oxide‐silicon capacitors: The effect of gate‐induced strain

Terence B. Hook, T. P. Ma, 1987 .

AC Transconductance Dispersion (ACGD): A Method to Profile Oxide Traps in MOSFETs Without Body Contact

C. Merckling, D. Lin, A. Alian, 2012, IEEE Electron Device Letters.

Determination of trap energy levels in AlGaN/GaN HEMT

Siddharth Rajan, Digbijoy Nath, Ting-Hsiang Hung, 2013, 71st Device Research Conference.

Lateral distribution of radiation-induced damage in MOSFETs

A. Balasinski, W. Chen, T. P. Ma, 1991 .

Highly robust ultra-thin gate dielectric for giga scale technology

T. P. Ma, M. Khare, M. Khare, 1998, 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216).

Ionizing radiation effects in MOS devices and circuits

T. P. Ma, Paul V. Dressendorfer, P. Dressendorfer, 1989 .

Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method

Kuei-Shu Chang-Liao, Tomas Palacios, Omair I. Saadat, 2013 .

Total-Ionizing-Dose Radiation Effects in AlGaN/GaN HEMTs and MOS-HEMTs

Tomas Palacios, Omair I. Saadat, T. P. Ma, 2013, IEEE Transactions on Nuclear Science.

Metal–oxide–semiconductor gate oxide reliability and the role of fluorine

T. P. Ma, T. Ma, 1992 .

Improved AC conductance and Gray-Brown methods to characterize fast and slow traps in Ge metal–oxide–semiconductor capacitors

Guy Brammertz, Dennis Lin, Clement Merckling, 2012 .

Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen

Steven A. Ringel, Yoshio Nishi, T. P. Ma, 2013 .

High‐field tunneling calculations in metal‐oxide‐silicon capacitors incorporating the perimeter effect

Terence B. Hook, T. P. Ma, 1986 .

Making Silicon Nitride Film a Viable Gate Dielectric

T. P. Ma, T. Ma, 1998 .

Opportunities and challenges for high-k gate dielectrics

T. P. Ma, 2004, IPFA 2004.

Fin-Width Effects on Characteristics of InGaAs-Based Independent Double-Gate FinFETs

Hong Zhou, Mengwei Si, Peide D. Ye, 2017, IEEE Electron Device Letters.

Radiation and hot‐electron effects on SiO2/Si interfaces with oxides grown in O2 containing small amounts of trichloroethane

Richard C. Barker, T. P. Ma, Yasushiro Nishioka, 1988 .