Jun-ning Chen

Resistive switching memory effect of ZrO2 films with Zr+ implanted

Qi Liu, S. Long, Junning Chen, 2008 .

Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode.

Qi Liu, S. Long, Wei Wang, 2010, ACS nano.

Organic Programmable Resistance Memory Device Based on $\hbox{Au/Alq}_{3}/\hbox{gold-nanoparticle/Alq}_{3}/\hbox{Al}$ Structure

Ming Liu, Congyan Lu, Z. Ji, 2011, IEEE Electron Device Letters.

Resistance switching of Au-implanted-ZrO2 film for nonvolatile memory application

Shibing Long, Qi Liu, Qi Liu, 2008 .

Organic Programmable Resistance Memory Device Based on Au/Alq 3 /gold-nanoparticle/Alq 3 /Al Structure

Ming Liu, Hong Wang, Congyan Lu, 2011 .

A novel junction-assisted programming scheme for Si-nanocrystal memory devices with improved performance

Manhong Zhang, Qin Wang, Ming Liu, 2011, Semiconductor Science and Technology.

Improvement of resistive switching properties in ZrO2- based ReRAM with implanted metal ions

Qi Liu, S. Long, Junning Chen, 2009, 2009 Proceedings of the European Solid State Device Research Conference.

Low-Power and Highly Uniform Switching in $ \hbox{ZrO}_{2}$-Based ReRAM With a Cu Nanocrystal Insertion Layer

Zongliang Huo, Manhong Zhang, Wei Wang, 2010, IEEE Electron Device Letters.

Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device

Wei Wang, Manhong Zhang, Yan Wang, 2009 .