H. Ohtsuka

Hot-carrier-induced degradation of N/sub 2/O-oxynitrided gate oxide NMOSFETs

Toshimasa Matsuoka, Kenji Taniguchi, Chihiro Hamaguchi, 1996 .

arrier-In uced Degradation of itrided Gate Oxide NMOSFET' s

K. Taniguchi, C. Hamaguchi, T. Matsuoka, 1996 .

Ionized impurity scattering rate for full band Monte Carlo simulation in heavily doped n‐type silicon

K. Taniguchi, C. Hamaguchi, H. Ohtsuka, 1996 .