J. S. Yim

发表

Characteristics of In(Ga)As quantum dot lasers on InP emitting at 1.5μm in continuous wave mode

S. H. Pyun, N. J. Kim, J. S. Yim, 2006, SPIE OPTO.

Free Vibration Analysis of a Circular Cylindrical Shell with a Spherical Cap

J. S. Yim, D. S. Sohn, 2002 .

Epitaxial growth and optical characterization of InAs/InGaAsP/InP self-assembled quantum dots

Donghan Lee, J. S. Yim, P. Daniel Dapkus, 2001 .

Continuous-wave operation of 1.5μm InGaAs∕InGaAsP∕InP quantum dot lasers at room temperature

S. H. Pyun, P. D. Dapkus, J. S. Yim, 2005 .

Improving off-state leakage characteristics for high voltage AlGaN/GaN-HFETs on Si substrates

S. D. Roh, J. S. Yim, S. Moon, 2014 .

600 V-18 A GaN Power MOS-HEMTs on 150 mm Si Substrates With Au-Free Electrodes

S. D. Roh, J. S. Yim, S. Moon, 2014, IEEE Electron Device Letters.

Convex-shaped decay curve of carriers in a vertically coupled InAs∕GaAs quantum dot

J. S. Yim, Seunguk Noh, Y. Jang, 2005 .

Unambiguous observation of electronic couplings between InGaAs∕InGaAsP quantum dots emitting at 1.5μm

S. H. Pyun, J. S. Yim, W. Jeong, 2006 .

Optical Characteristics of InAs/InGaAsP/InP Self-Assembled Quantum Dots Emitting at 1.4–1.6 µm

J. S. Yim, P. Dapkus, Byung-Teak Lee, 2002 .

Strong photoluminescence at 1.3μm with a narrow linewidth from nitridized InAs∕GaAs quantum dots

S. H. Pyun, J. S. Yim, N. Kim, 2006 .

Optical characteristics of In(Ga)As quantum dots on (100) InP substrate for 1.5mum laser diodes

H. D. Kim, J. S. Yim, J. H. Lee, 2005, Microelectron. J..

Optical Characteristics of Self-Assembled InAs/GaAs Quantum Dots at Various Temperatures and Excitations

J. S. Yim, J. Leem, S. Noh, 2000 .

Experimental determination of electron and hole sublevels in modulation-doped InAs∕GaAs quantum dots

J. S. Yim, D. Ritchie, I. Farrer, 2005 .

High-voltage GaN-on-Si hetero-junction FETs with reduced leakage and current collapse effects using SiNx surface passivation layer deposited by low pressure CVD

S. D. Roh, J. S. Yim, S. Moon, 2014 .