N. Balasubramanian

发表

Optical Considerations in the Application of Holographic Stereomodels to Topographic Mapping

Warren H. Stevenson, N. Balasubramanian, 1972 .

Dynamic response of orthotropic curved bridge decks due to moving loads

N. Balasubramanian, S. S. Dey, 1984 .

Laminated metal gate electrode with tunable work function for advanced CMOS

N. Balasubramanian, D.L. Kwong, W.P. Bai, 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..

A small OCA on a 1/spl times/0.5-mm/sup 2/ 2.45-GHz RFID Tag-design and integration based on a CMOS-compatible manufacturing technology

A.P. Popov, N. Balasubramanian, L.H. Guo, 2006, IEEE Electron Device Letters.

Three-Layer laminated metal gate electrodes with tunable work functions for CMOS applications

N. Balasubramanian, S. Mathew, H.C. Wen, 2005, IEEE Electron Device Letters.

High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices

S.C. Rustagi, R. Kumar, N. Balasubramanian, 2006, IEEE Electron Device Letters.

Vertically Stacked SiGe Nanowire Array Channel CMOS Transistors

S.C. Rustagi, N. Balasubramanian, N. Singh, 2007, IEEE Electron Device Letters.

Ultra-Narrow Silicon Nanowire Gate-All-Around CMOS Devices: Impact of Diameter, Channel-Orientation and Low Temperature on Device Performance

S.C. Rustagi, N. Balasubramanian, N. Singh, 2006, 2006 International Electron Devices Meeting.

Hot Carrier Reliability of Strained N-Mosfet with Lattice Mismatched Source/Drain Stressors

Kah-Wee Ang, King-Jien Chui, Yee-Chia Yeo, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

Successful transferring of active transistors, rf-passive components and high density interconnect from bulk si to organic substrates

E.B. Liao, N. Balasubramanian, L.H. Guo, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Si-Nanowire Based Gate-All-Around Nonvolatile SONOS Memory Cell

S.H.G. Teo, N. Balasubramanian, E. Gnani, 2008, IEEE Electron Device Letters.

A study of thermo-mechanical stress and its impact on through-silicon vias

Kin Leong Pey, N. Balasubramanian, N. Balasubramanian, 2008 .

Integration of RF-MEMS, passives and CMOS-IC on silicon substrate by low temperature wafer to wafer bonding technique

E.B. Liao, N. Balasubramanian, M. Tang, 2008, 2008 58th Electronic Components and Technology Conference.

Thermally robust TaTb/sub x/N metal gate electrode for n-MOSFETs applications

D.S.H. Chan, N. Balasubramanian, D. Kwong, 2005, IEEE Electron Device Letters.

Active corner engineering in the process integration for shallow trench isolation

N. Balasubramanian, R. Sundaresan, E. Johnson, 2000 .

Observation of Metal-Layer Stress on Si Nanowires in Gate-All-Around High- $\kappa$/Metal-Gate Device Structures

S.C. Rustagi, S.H.G. Teo, N. Balasubramanian, 2007, IEEE Electron Device Letters.

CMOS Inverter Based on Gate-All-Around Silicon-Nanowire MOSFETs Fabricated Using Top-Down Approach

S.C. Rustagi, S.H.G. Teo, N. Balasubramanian, 2007, IEEE Electron Device Letters.

High-density MIM capacitors (/spl sim/85 nF/cm/sup 2/) on organic substrates

R. Kumar, E.B. Liao, N. Balasubramanian, 2005, IEEE Electron Device Letters.

High Aspect Ratio Through-Wafer Interconnect for Three Dimensional Integrated Circuits

N. Balasubramanian, S. C. Hwee, N. Balasubramanian, 2005, Proceedings Electronic Components and Technology, 2005. ECTC '05..

Trap Layer Engineered Gate-All-Around Vertically Stacked Twin Si -Nanowire Nonvolatile Memory

S.H.G. Teo, N. Balasubramanian, M.B. Yu, 2007, 2007 IEEE International Electron Devices Meeting.

Through-wafer interconnection by deep damascene process for MEMS and 3D wafer level packaging

N. Balasubramanian, Jiang Ning, C.S. Premachandran, 2005, 2005 7th Electronic Packaging Technology Conference.

N-Channel (110)-Sidewall Strained FinFETs With Silicon–Carbon Source and Drain Stressors and Tensile Capping Layer

Yee-Chia Yeo, Tsung-Yang Liow, N. Balasubramanian, 2007, IEEE Electron Device Letters.

Integration of High Aspect Ratio Tapered Silicon Via for Silicon Carrier Fabrication

V. Kripesh, N. Balasubramanian, O.K. Navas, 2009, IEEE Transactions on Advanced Packaging.

Hot-Carrier Effects in Strained n-Channel Transistor With Silicon–Carbon $(\hbox{Si}_{1 - y}\hbox{C}_{y})$ Source/Drain Stressors and Its Orientation Dependence

Kah-Wee Ang, Yee-Chia Yeo, N. Balasubramanian, 2007, IEEE Electron Device Letters.

Strained Thin-Body p-MOSFET With Condensed Silicon-Germanium Source/Drain for Enhanced Drive Current Performance

Kah-Wee Ang, King-Jien Chui, Yee-Chia Yeo, 2007, IEEE Electron Device Letters.

High-performance inductors on plastic substrate

N. Balasubramanian, L.H. Guo, D.-L. Kwong, 2005, IEEE Electron Device Letters.

Carrier Transport Characteristics of Sub-30 nm Strained N-Channel FinFETs Featuring Silicon-Carbon Source/Drain Regions and Methods for Further Performance Enhancement

Yee-Chia Yeo, Tsung-Yang Liow, N. Balasubramanian, 2006, 2006 International Electron Devices Meeting.

Fabrication Aspects of Germanium on Insulator from Sputtered Ge on Si-Substrates

Dim-Lee Kwong, R. Kumar, Gao Fei, 2006 .

Lanthanide-incorporated metal nitrides with tunable work function and good thermal stability for NMOS devices

D.S.H. Chan, N. Balasubramanian, A.D. Trigg, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

Strained ${\rm n}$-MOSFET With Embedded Source/Drain Stressors and Strain-Transfer Structure (STS) for Enhanced Transistor Performance

Kah-Wee Ang, Yee-Chia Yeo, N. Balasubramanian, 2008, IEEE Transactions on Electron Devices.

Development of a novel deep silicon tapered via etch process for through-silicon interconnection in 3-D integrated systems

N. Balasubramanian, N. Balasubramanian, R. Nagarajan, 2006, 56th Electronic Components and Technology Conference 2006.

Thin body silicon-on-insulator N-MOSFET with silicon-carbon source/drain regions for performance enhancement

Kah-Wee Ang, King-Jien Chui, Yee-Chia Yeo, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Strained p-Channel FinFETs With Extended $\Pi$ -Shaped Silicon–Germanium Source and Drain Stressors

Yee-Chia Yeo, Tsung-Yang Liow, N. Balasubramanian, 2007, IEEE Electron Device Letters.

5 nm gate length Nanowire-FETs and planar UTB-FETs with pure germanium source/drain stressors and laser-free Melt-Enhanced Dopant (MeltED) diffusion and activation technique

Ming Zhu, N. Balasubramanian, G.S. Samudra, 2008, 2008 Symposium on VLSI Technology.

Random Telegraph Signal Noise in Gate-All-Around Si-FinFET With Ultranarrow Body

D.S.H. Chan, N. Balasubramanian, N. Singh, 2006, IEEE Electron Device Letters.

A concise process technology for 3-D suspended radio frequency micro-inductors on silicon substrate

Y.C. Liang, N. Balasubramanian, N. Balasubramanian, 2002, IEEE Electron Device Letters.

Strained n-Channel FinFETs Featuring In Situ Doped Silicon – Carbon ( Si 1 − y C y ) Source and Drain Stressors With High Carbon Content

Yee-Chia Yeo, Tsung-Yang Liow, Matthias Bauer, 2009 .

Enhanced Strain Effects in 25-nm Gate-Length Thin-Body nMOSFETs With Silicon–Carbon Source/Drain and Tensile-Stress Liner

Kah-Wee Ang, King-Jien Chui, Yee-Chia Yeo, 2007, IEEE Electron Device Letters.

Lattice strain analysis of transistor structures with silicon–germanium and silicon–carbon source∕drain stressors

Kah-Wee Ang, King-Jien Chui, Yee-Chia Yeo, 2005 .

Pulsed Laser Annealing of Silicon-Carbon Source/Drain in MuGFETs for Enhanced Dopant Activation and High Substitutional Carbon Concentration

Yee-Chia Yeo, Tsung-Yang Liow, N. Balasubramanian, 2008, IEEE Electron Device Letters.

Integration of RF MEMS and CMOS IC on a Printed Circuit Board for a Compact RF System Application Based on Wafer Transfer

E.B. Liao, N. Balasubramanian, L.H. Guo, 2008, IEEE Transactions on Electron Devices.

Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition

Dim-Lee Kwong, N. Balasubramanian, Chih-Hang Tung, 2007 .

A High-Stress Liner Comprising Diamond-Like Carbon (DLC) for Strained p-Channel MOSFET

Ming Zhu, Yee-Chia Yeo, Tsung-Yang Liow, 2008, IEEE Electron Device Letters.

Gate-first Germanium nMOSFET with CVD HfO/sub 2/ gate dielectric and silicon surface passivation

D.S.H. Chan, N. Balasubramanian, N. Balasubramanian, 2006, IEEE Electron Device Letters.

Gate-all-around Si-nanowire CMOS inverter logic fabricated using top-down approach

S.C. Rustagi, S.H.G. Teo, N. Balasubramanian, 2007, ESSDERC 2007 - 37th European Solid State Device Research Conference.

Low-Temperature Transport Characteristics and Quantum-Confinement Effects in Gate-All-Around Si-Nanowire N-MOSFET

S.C. Rustagi, N. Balasubramanian, N. Singh, 2007, IEEE Electron Device Letters.

A dual-strained CMOS structure through simultaneous formation of relaxed and compressive strained-SiGe-on-insulator

R. Kumar, N. Balasubramanian, B. Abidha, 2006, IEEE Electron Device Letters.

The development of a tapered silicon micro-micromachining process for 3D microsystems packaging

Kin Leong Pey, N. Balasubramanian, N. Balasubramanian, 2008 .

Si, SiGe Nanowire Devices by Top–Down Technology and Their Applications

S.C. Rustagi, N. Balasubramanian, K. Buddharaju, 2008, IEEE Transactions on Electron Devices.

Sub-100 nm MOSFET fabrication with low temperature resist trimming process

Ranganathan Nagarajan, N. Balasubramanian, L. K. Bera, 2004 .

Spacer Removal Technique for Boosting Strain in n-Channel FinFETs With Silicon-Carbon Source and Drain Stressors

Ming Zhu, Yee-Chia Yeo, Tsung-Yang Liow, 2008, IEEE Electron Device Letters.

RF, DC, and Reliability Performance of MIM Capacitors Embedded in Organic Substrates by Wafer-Transfer Technology (WTT) for System-on-Package Applications

Guo-Qiang Lo, Dim-Lee Kwong, R. Kumar, 2007, IEEE Transactions on Electron Devices.

Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8Ge0.2 buffer

Dim-Lee Kwong, N. Balasubramanian, J. Wang, 2007 .

n-MOSFET With Silicon–Carbon Source/Drain for Enhancement of Carrier Transport

Kah-Wee Ang, King-Jien Chui, Yee-Chia Yeo, 2007, IEEE Transactions on Electron Devices.

Strained N-Channel FinFETs with 25 nm Gate Length and Silicon-Carbon Source/Drain Regions for Performance Enhancement

Yee-Chia Yeo, Tsung-Yang Liow, N. Balasubramanian, 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

A New Liner Stressor with Very High Intrinsic Stress (≫ 6 GPa) and Low Permittivity Comprising Diamond-Like Carbon (DLC) for Strained P-Channel Transistors

Ming Zhu, Tsung-Yang Liow, N. Balasubramanian, 2007, 2007 IEEE International Electron Devices Meeting.

Bendability of single-crystal Si MOSFETs investigated on flexible substrate

E.B. Liao, N. Balasubramanian, L.H. Guo, 2006, IEEE Electron Device Letters.