A. Krier

Mid-infrared optoelectronics materials and devices

A. Krier, 1996 .

Growth and characterisation of InAsN/GaAs dilute nitride semiconductor alloys for the mid-infrared spectral range

A. Krier, S. Dhar, M. de la Mare, 2009, Remote Sensing.

MBE growth and characterization of dilute nitrides for mid-infrared optoelectronic devices

A. Krier, M. de la Mare, Q. Zhuang, 2011, OPTO.

Type II GaSb/GaAs quantum rings with extended photoresponse for efficient solar cells

H. Fujita, M. C. Wagener, J. R. Botha, 2016, Optics + Photonics for Sustainable Energy.

InAs-based dilute nitride materials and devices for the mid-infrared spectral range

A. Krier, M. de la Mare, Q. Zhuang, 2013, Photonics West - Optoelectronic Materials and Devices.

Resonant cavity enhanced photodiodes on GaSb for the mid-wave infrared

A. Bainbridge, A. P. Craig, A. Krier, 2019, Applied Physics Letters.

Growth, structure, and optical properties of GaSb quantum dot by LPE technique

N. Dai, Y. Zhang, A. Krier, 2013, 2013 IEEE 5th International Nanoelectronics Conference (INEC).

Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode

A. Krier, L. Eaves, A. Krier, 2016, Scientific Reports.