Jiubai Zhang

A Half-Select Disturb-Free 11T SRAM Cell With Built-In Write/Read-Assist Scheme for Ultralow-Voltage Operations

Xin Si, Bo Zhang, Shaowei Zhen, 2019, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

A Novel 8T SRAM Cell with Improved Read and Write Margins

Song Li, Xiulong Wu, Zhiting Lin, 2015 .

A Disturb-Free 10T SRAM Cell with High Read Stability and Write Ability for Ultra-Low Voltage Operations

Xiaoqing Wu, Bo Zhang, Yajuan He, 2018, 2018 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS).

A Subthreshold 10T SRAM Cell with Enhanced Read and Write Operations

Jiubai Zhang, Xilin Yi, Xiaoqing Wu, 2019, 2019 IEEE International Symposium on Circuits and Systems (ISCAS).