Anthony G. Domenicucci

Status of 300 mm SOI material: Comparisons with 200 mm

Richard J. Murphy, D. K. Sadana, Harold J. Hovel, 2003 .

Effect of copper on the microstructure and electromigration lifetime of Ti–AlCu–Ti fine lines in the presence of tungsten diffusion barriers

Ronald G. Filippi, Kenneth P. Rodbell, Anthony G. Domenicucci, 1996 .

New opportunities for SiGe and Ge channel p-FETs

Ali Khakifirooz, Stephen W. Bedell, Devendra K. Sadana, 2011 .

Defects and electrical consequences in SOI buried oxides

Harold J. Hovel, M. Almonte, Anthony G. Domenicucci, 2003 .

Stress and Strain Measurements in Semiconductor Device Channel Areas by Convergent Beam Electron Diffraction

Anthony G. Domenicucci, Dureseti Chidambarrao, Hung Ng, 2006 .