Ivor Guiney

Single-step manufacturing process for the production of graphene-V/III LED heterostructures

Ivor Guiney, Simon Thomas, Colin J. Humphreys, 2017, OPTO.

Enhancement mode operation in AlInN/GaN (MIS)HEMTs on Si substrates using a fluorine implant

Sheng Jiang, Peter A. Houston, Ivor Guiney, 2015, Semiconductor Science and Technology.

An Atomic Layer Etch Process Based on a Cycled Procedure of Chlorination in Cl2 and Argon Plasma Removal of Chlorides for GaN Based Device Fabrication

Sung-Jin Cho, Iain G. Thayne, David A. J. Moran, 2016 .

Subthreshold Mobility in AlGaN/GaN HEMTs

Martin Kuball, Jan Sonsky, Peter A. Houston, 2016, IEEE Transactions on Electron Devices.

Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics

Sung-Jin Cho, Paul R. Chalker, Iain G. Thayne, 2016 .

Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique

Ivor Guiney, Colin J. Humphreys, Matthias Beck, 2016 .

All-GaN-Integrated Cascode Heterojunction Field Effect Transistors

Andrew J. Forsyth, Pablo F. Miaja, Sheng Jiang, 2017, IEEE Transactions on Power Electronics.

Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs

Martin Kuball, Peter A. Houston, Michael J. Uren, 2015, IEEE Transactions on Electron Devices.

The Impact on GaN MOS Capacitor Performance of In‐situ Processing in a Clustered ALD/ICP/RIE Tool

Sung-Jin Cho, Iain G. Thayne, David A. J. Moran, 2017 .