Colin J. Humphreys

发表

Single-step manufacturing process for the production of graphene-V/III LED heterostructures

Ivor Guiney, Simon Thomas, Colin J. Humphreys, 2017, OPTO.

Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs

Gaudenzio Meneghesso, Enrico Zanoni, Nicola Trivellin, 2013, Photonics West - Optoelectronic Materials and Devices.

Automatized convergence of optoelectronic simulations using active machine learning

Kipton Barros, Turab Lookman, Colin J. Humphreys, 2017 .

Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold

Ian W. Boyd, Colin J. Humphreys, Wai Yuen Fu, 2016 .

Characterisation of silicon nanocrystals and Er3+ in silica

Anthony J. Kenyon, Nikhil Sharma, Christopher W. Pitt, 2000 .

SHAPING THE FUTURE OF MATERIALS SCIENCE

Colin J. Humphreys, W. Hume-Rothery, 1998 .

Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core–shell light-emitting diodes

Colin J. Humphreys, Philip A. Shields, Duncan W. E. Allsopp, 2016 .

Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements

K. D. Vernon-Parry, Colin J. Humphreys, Menno J. Kappers, 2012 .

Dataset for Investigation of InGaN facet-dependent non-polar growth rates and composition for core-shell LEDs

Colin J. Humphreys, Philip A. Shields, Duncan W. E. Allsopp, 2016 .

Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures

Duncan Watson-Parris, Phil Dawson, Colin J. Humphreys, 2013 .

Comment on “AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. 81, 1729 (2002)]

A. E. Belyaev, C. T. Foxon, Colin J. Humphreys, 2003 .

Critical thickness calculations for InGaN/GaN

David Holec, Colin J. Humphreys, Menno J. Kappers, 2007 .

Optical and microstructural properties of semi‐polar (11‐22) InGaN/GaN quantum well structures

Colin J. Humphreys, Clifford McAleese, Menno J. Kappers, 2009 .

Microstructural and electron spectroscopic characterization of carbon nanostructures and nanotubes produced using multimetal catalysts

J. C. Withers, Colin J. Humphreys, Gavin Burnell, 1997 .

Electronic and optical properties of nonpolar a-plane GaN quantum wells

Eoin P. O'Reilly, Colin J. Humphreys, Menno J. Kappers, 2010 .

Defect reduction in (112¯2) semipolar GaN grown on m-plane sapphire using ScN interlayers

Colin J. Humphreys, Menno J. Kappers, Michelle A. Moram, 2009 .

Lattice distortions in GaN thin films on (0001) sapphire

Colin J. Humphreys, Menno J. Kappers, Dandan Zhu, 2010 .

Accurate experimental determination of the Poisson’s ratio of GaN using high-resolution x-ray diffraction

Colin J. Humphreys, Zoe H. Barber, Michelle A. Moram, 2007 .

Enhancement mode operation in AlInN/GaN (MIS)HEMTs on Si substrates using a fluorine implant

Sheng Jiang, Peter A. Houston, Ivor Guiney, 2015, Semiconductor Science and Technology.

Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope

Colin J. Humphreys, Menno J. Kappers, C. Humphreys, 2003 .

A quantitative model for doping contrast in the scanning electron microscope using calculated potential distributions and Monte Carlo simulations

R. F. Broom, Colin J. Humphreys, C. Humphreys, 2011 .

Dielectric response of wurtzite gallium nitride in the terahertz frequency range

Colin J. Humphreys, Menno J. Kappers, Rachel A. Oliver, 2016 .

Optimizing and quantifying dopant mapping using a scanning electron microscope with a through-the-lens detector

R. F. Broom, Colin J. Humphreys, A. Howie, 2003 .

Effects of oxygen plasma treatments on the formation of ohmic contacts to GaN

Colin J. Humphreys, Menno J. Kappers, Zoe H. Barber, 2004 .

Dislocation movement in GaN films

Colin J. Humphreys, Menno J. Kappers, M. Häberlen, 2010 .

High voltage electron microscopy : proceedings of the third International Conference

Colin J. Humphreys, Peter Roland Swann, M. J. Goringe, 1974 .

Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy

R. A. Davies, Colin J. Humphreys, M. Weyland, 2001 .

Performance and degradation characteristics of blue–violet laser diodes grown by molecular beam epitaxy

Stewart Edward Hooper, Jonathan Heffernan, Colin J. Humphreys, 2009 .

Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping

Wai Yuen Fu, Siyuan Zhang, Bertrand Rouet-Leduc, 2015, Nano letters.

Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes

Pleun Maaskant, Brian Corbett, Liam Lewis, 2009 .

Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates

Erdan Gu, Martin D. Dawson, Anthony E. Kelly, 2014 .

Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering

Debbie J. Stokes, Alfred Cerezo, Colin J. Humphreys, 2007 .

Atom probe tomography today

Alfred Cerezo, David J. Larson, Gang Sha, 2007 .

Three-dimensional atom probe analysis of green- and blue-emitting InxGa1−xN∕GaN multiple quantum well structures

Alfred Cerezo, David J. Larson, Colin J. Humphreys, 2008 .

InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal

Robert A. Taylor, James H. Rice, G. Andrew D. Briggs, 2003 .

Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues

Giovanni Ghione, Gaudenzio Meneghesso, Enrico Bellotti, 2014 .

High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380 nm

Colin J. Humphreys, Clifford McAleese, Menno J. Kappers, 2007 .

The effect of dislocations on the efficiency of InGaN/GaN solar cells

Feng Gao, Colin J. Humphreys, Menno J. Kappers, 2013 .

Growth modes in heteroepitaxy of InGaN on GaN

G. Andrew D. Briggs, Colin J. Humphreys, Menno J. Kappers, 2005 .

Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm

Peter Blood, Peter Michael Smowton, Iestyn Pope, 2003, Applied Physics Letters.

Subthreshold Mobility in AlGaN/GaN HEMTs

Martin Kuball, Jan Sonsky, Peter A. Houston, 2016, IEEE Transactions on Electron Devices.

Atomic Arrangement of a Z-Shape Faulted Dipole within Deformed GaAs

Colin J. Humphreys, D. Shindo, Paul D. Brown, 1998 .

Broad-band and flashlamp pumping of 1.53 μm emission from erbium-doped silicon nanocrystals

Anthony J. Kenyon, Nikhil Sharma, C. E. Chryssou, 2001 .

Nanometre hole formation in MgO using electron beams

Colin J. Humphreys, Tim J. Bullough, C. Humphreys, 1990 .

Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers

Colin J. Humphreys, Menno J. Kappers, Rachel A. Oliver, 2007 .

Degradation of III‐nitride laser diodes grown by molecular beam epitaxy

Stewart Edward Hooper, Jonathan Heffernan, Colin J. Humphreys, 2008 .

Misfit dislocations in In‐rich InGaN/GaN quantum well structures

Colin J. Humphreys, Menno J. Kappers, C. Humphreys, 2006 .

Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics

Sung-Jin Cho, Paul R. Chalker, Iain G. Thayne, 2016 .

Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates

Erdan Gu, Martin D. Dawson, Benoit Guilhabert, 2013 .

Origin of faceted surface hillocks on semi-polar (112¯2) GaN templates grown on pre-structured sapphire

Ferdinand Scholz, Colin J. Humphreys, Menno J. Kappers, 2015 .

Degradation of InGaN∕GaN laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings

Stewart Edward Hooper, Jonathan Heffernan, Colin J. Humphreys, 2008 .

The influence of ammonia on the growth mode in InGaN/GaN heteroepitaxy

G. Andrew D. Briggs, Colin J. Humphreys, Menno J. Kappers, 2004 .

On the origin of threading dislocations in GaN films

Colin J. Humphreys, Menno J. Kappers, Michelle A. Moram, 2009 .

Understanding x-ray diffraction of nonpolar gallium nitride films

Colin J. Humphreys, Menno J. Kappers, Michelle A. Moram, 2009 .

Microstructural evolution of nonpolar (11-20) GaN grown on (1-102) sapphire using a 3D-2D method

Colin J. Humphreys, Menno J. Kappers, C. Humphreys, 2009 .

Growth and coalescence studies of (112‾2) oriented GaN on pre‐structured sapphire substrates using marker layers

Ferdinand Scholz, Colin J. Humphreys, Klaus Thonke, 2016 .

Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique

Ivor Guiney, Colin J. Humphreys, Matthias Beck, 2016 .

The effects of annealing on non-polar ( 1 1 2̄ 0) a-plane GaN films

Colin J. Humphreys, Menno J. Kappers, M. Häberlen, 2010 .

The scattering of fast electrons by crystals

Colin J. Humphreys, C. Humphreys, 1979 .

Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers

Colin J. Humphreys, Menno J. Kappers, Michelle A. Moram, 2009 .

All-GaN-Integrated Cascode Heterojunction Field Effect Transistors

Andrew J. Forsyth, Pablo F. Miaja, Sheng Jiang, 2017, IEEE Transactions on Power Electronics.

Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire

Colin J. Humphreys, Menno J. Kappers, Michelle A. Moram, 2009 .

The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures

Duncan Watson-Parris, Colin J. Humphreys, Clifford McAleese, 2012 .

Does In form In-rich clusters in InGaN quantum wells?

Colin J. Humphreys, C. Humphreys, 2007 .

High voltage electron microscopy

Colin J. Humphreys, M. J. Goringe, Timothy K. Maugel, 1973 .

Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printing.

Erdan Gu, Martin D. Dawson, Benoit Guilhabert, 2015, Optics express.

Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs

Martin Kuball, Peter A. Houston, Michael J. Uren, 2015, IEEE Transactions on Electron Devices.

Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells

Giovanni Ghione, Gaudenzio Meneghesso, Enrico Bellotti, 2013 .

Dopant profiling with the scanning electron microscope—A study of Si

R. F. Broom, Colin J. Humphreys, C. Humphreys, 2002 .

Modification of carrier localization in basal‐plane stacking faults: The effect of Si‐doping in a‐plane GaN

Colin J. Humphreys, Menno J. Kappers, Michelle A. Moram, 2012 .

Degradation of GaN-based quantum well light-emitting diodes

W. A. Phillips, Colin J. Humphreys, C. Humphreys, 2008 .

Improvements in a-plane GaN crystal quality by a two-step growth process

Colin J. Humphreys, Clifford McAleese, Menno J. Kappers, 2008 .

Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms

Anthony J. Kenyon, Nikhil Sharma, C. E. Chryssou, 2002 .

The Impact on GaN MOS Capacitor Performance of In‐situ Processing in a Clustered ALD/ICP/RIE Tool

Sung-Jin Cho, Iain G. Thayne, David A. J. Moran, 2017 .

Equilibrium critical thickness for misfit dislocations in III-nitrides

David Holec, Colin J. Humphreys, Clifford McAleese, 2008 .

Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structures

Colin J. Humphreys, Clifford McAleese, Menno J. Kappers, 2007 .

Atom probe tomography assessment of the impact of electron beam exposure on InxGa1−xN/GaN quantum wells

Colin J. Humphreys, Menno J. Kappers, Rachel A. Oliver, 2011 .

The origin of dislocations in multilayers

Colin J. Humphreys, D. J. Eaglesham, C. Humphreys, 1991 .

Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3

Colin J. Humphreys, Menno J. Kappers, Rachel A. Oliver, 2006 .

Current–voltage instabilities in GaN/AlGaN resonant tunnelling structures

A. E. Belyaev, Svetlana Vitusevich, S. V. Danylyuk, 2003 .

A theoretical model for the energy dependence of electron channelling patterns in scanning electron microscopy

Rolf Sandström, Colin J. Humphreys, C. Humphreys, 1974, Journal of Physics D: Applied Physics.

Low-cost high-efficiency GaN LED on large-area si substrate

Colin J. Humphreys, D Zhu, 2013 .

High-Speed Substrate-Emitting Micro-Light-Emitting Diodes for Applications Requiring High Radiance

Pleun Maaskant, Haymen Shams, Brian Corbett, 2013 .

Elastic constants and critical thicknesses of ScGaN and ScAlN

Wai Yuen Fu, Siyuan Zhang, David Holec, 2013 .

Determination of relative internal quantum efficiency in InGaN∕GaN quantum wells

Phil Dawson, A. J. Kent, Colin J. Humphreys, 2005 .

Optimisation of GaN LEDs and the reduction of efficiency droop using active machine learning

Kipton Barros, Turab Lookman, Bertrand Rouet-Leduc, 2016, Scientific Reports.

Comparative study of polar and semipolar (112¯2) InGaN layers grown by metalorganic vapour phase epitaxy

Duc V. Dinh, Vitaly Z. Zubialevich, Colin J. Humphreys, 2014 .

Chemical mapping and formation of V-defects in InGaN multiple quantum wells

Nikhil Sharma, Colin J. Humphreys, C. Humphreys, 2000 .

Novel fabrication method for nanometer‐scale silicon dots and wires

Colin J. Humphreys, Chris Boothroyd, C. Boothroyd, 1993 .

The impact of electron beam damage on the detection of indium-rich localisation centres in InGaN quantum wells using transmission electron microscopy

Colin J. Humphreys, Menno J. Kappers, C. Humphreys, 2006 .

Dislocation reduction in gallium nitride films using scandium nitride interlayers

Yan Zhang, Colin J. Humphreys, Menno J. Kappers, 2007 .