Bo Li

Improving Driving Current with High-Efficiency Landing Pads Technique for Reduced Parasitic Resistance in Gate-All-Around Si Nanosheet Device

Guilei Wang, Lei Cao, Jinbiao Liu, 2022, ECS Journal of Solid State Science and Technology.

Optimization of zero-level interlayer dielectric materials for gate-all-around silicon nanowire channel fabrication in a replacement metal gate process

Guilei Wang, H. Yin, Jiang Yan, 2021 .

X-ray irradiation-induced degradation in Hf0.5Zr0.5O2 fully depleted silicon-on-insulator n-type metal oxide semiconductor field-effect transistors

Jiang Yan, Qing-zhu Zhang, Yudong Li, 2020, Rare Metals.