Shin-Rung Wu

17.2 A 64kb 16nm asynchronous disturb current free 2-port SRAM with PMOS pass-gates for FinFET technologies

Hidehiro Fujiwara, Jonathan Chang, Shien-Yang Wu, 2015, 2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers.

A 64-Kb 0.37V 28nm 10T-SRAM with mixed-Vth read-port and boosted WL scheme for IoT applications

Hidehiro Fujiwara, Jonathan Chang, Hung-Jen Liao, 2016, 2016 IEEE Asian Solid-State Circuits Conference (A-SSCC).