Takeshi Murakami

Reliability investigation with accelerated body diode current stress for 3.3 kV 4H-SiC MOSFETs with various buffer epilayer thickness

Hiroaki Sumitani, Masayuki Imaizumi, Eisuke Suekawa, 2018, 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Improving Surge Current Capability of SBD-Embedded SiC-MOSFETs in Parallel Connection by Applying Bipolar Mode Activation Cells

K. Kawahara, S. Hino, K. Nishikawa, 2023, International Symposium on Power Semiconductor Devices and IC's.