J. Bataille

Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress

D. Floriot, Hervé Blanck, Nathalie Labat, 2013, Microelectron. Reliab..

Reliability data's of 0.5 μm AlGaN/GaN on SiC technology qualification

D. Floriot, Hervé Blanck, Benoit Lambert, 2012, Microelectron. Reliab..