Hideki Satake

发表

Dielectric Breakdown Mechanism of Hf-silicate High-k Gate Dielectrics

Takeshi Yamaguchi, Hideki Satake, 2004 .

Wireless EEG patch sensor on forehead using on-demand stretchable electrode sheet and electrode-tissue impedance scanner

Shusuke Yoshimoto, Tsuyoshi Sekitani, Mitsuru Kikuchi, 2016, 2016 38th Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC).

A Sophisticated Toll and Routes Guidance System

Hideki Satake, Hidenori Sugimoto, Naotaka Terayama, 2011 .

Ultra Small Random Number Generating Circuits With A Novel Noise Source Device

Shinobu Fujita, Ken Uchida, Tetsufumi Tanamoto, 2003 .

Band diagram and carrier conduction mechanism in ZrO/sub 2//Zr-silicate/Si MIS structure fabricated by pulsed-laser-ablation deposition

Akira Toriumi, Noburu Fukushima, Hideki Satake, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Electrical reliability and structural inhomogeneity of thermally grown SiO2

Akira Toriumi, Naoki Yasuda, Tetsufumi Tanamoto, 1997 .

Enhancement of VTH Degradation under NBT Stress due to Hole Capturing

A. Toriumi, Yuichiro Mitani, Hideki Satake, 2003 .

SiO2 dielectric breakdown mechanism studied by the post-breakdown resistance statistics

Akira Toriumi, Hideki Satake, A. Toriumi, 2000 .

Correlation between two dielectric breakdown mechanisms in ultra‐thin gate oxides

Shinichi Takagi, Akira Toriumi, Naoki Yasuda, 1996 .

Improvement of charge-to-breakdown distribution by fluorine incorporation into thin gate oxides

Akira Toriumi, Yuichiro Mitani, Yasushi Nakasaki, 2003 .

Novel dielectric breakdown model of Hf-silicate with high temperature annealing

Noburu Fukushima, Hideki Satake, Takeshi Yamaguchi, 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

Common origin for stress‐induced leakage current and electron trap generation in SiO2

Akira Toriumi, Hideki Satake, A. Toriumi, 1995 .

Limitations of the two-frequency capacitance measurement technique applied to ultra-thin SiO/sub 2/ gate oxides

Akira Toriumi, Naoki Yasuda, Hideki Satake, 2001, ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153).

Highly reliable gate oxide under Fowler-Nordheim electron injection by deuterium pyrogenic oxidation and deuterated poly-Si deposition

Akira Toriumi, Hitoshi Itoh, Yuichiro Mitani, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

A Study of the Effect of Deuterium on Stress-Induced Leakage Current

Hitoshi Ito, Akira Toriumi, Yuichiro Mitani, 2000 .

Reconsideration of Hydrogen Release at Ultra Thin Gate Oxide Interface

Yuichiro Mitani, Hideki Satake, Y. Mitani, 2008 .

Advantages of HfAlON gate dielectric film for advanced low power CMOS application

Koji Tominaga, Tsuyoshi Horikawa, Akira Toriumi, 2005 .

Temperature dependent hole fluence to breakdown in thin gate oxides under Fowler–Nordheim electron tunneling injection

Akira Toriumi, Hideki Satake, 1995 .

Reliable Extractions of EOT and Vfb in Poly-Si Gate High-k MISFETs through Advanced Modeling of Gate and Substrate Capacitances

A. Toriumi, Tsuyoshi Horikawa, Naoki Yasuda, 2005 .