Kazuhide Yoneya

30.4 A 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology

Osamu Kobayashi, Koji Hosono, Ryo Fukuda, 2021, 2021 IEEE International Solid- State Circuits Conference (ISSCC).

A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology

Shinji Miyamoto, Frank Tsai, Hiroyuki Otake, 2008, 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.