Y. Lin

Interface tailoring for CMOS, cryogenic electronics, and beyond

J. Kwo, T. Pi, C. K. Cheng, 2023, 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT).

In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In)GaAs surfaces: electronic and electric structures

J. Kwo, T. Chiang, T. Pi, 2015, Nanotechnology.

Attainment of low subthreshold slope in planar inversion-channel InGaAs MOSFET with in situ deposited Al2O3/Y2O3 as a gate dielectric

J. Kwo, H. Wan, M. Hong, 2021, Japanese Journal of Applied Physics.

In situ Y2O3 on p-In0.53Ga0.47As—Attainment of low interfacial trap density and thermal stability at high temperatures

J. Kwo, M. Hong, H. Wan, 2021, Applied Physics Letters.

Perfecting high-κ/Ge and /InGaAs interfaces – push for ultimate CMOS and emerging cryogenic electronic devices

J. Kwo, T. Pi, C. K. Cheng, 2022, 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).

Effective passivation of p- and n-type In0.53Ga0.47As in achieving low leakage current, low interfacial traps, and low border traps

K. Lai, H. Wan, L. B. Young, 2024, Journal of Applied Physics.

Nanometer-thick molecular beam epitaxy Al films capped with in situ deposited Al2O3—High-crystallinity, morphology, and superconductivity

C. K. Cheng, L. B. Young, Y. Lin, 2024, Journal of Applied Physics.