Y.-H. G. Lin

Attainment of nearly thermally limited subthreshold slope in GaAs MOSFETs with in-situ Y2O3gate dielectric for cryogenic electronics

J. Kwo, H. Wan, M. Hong, 2023, 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT).

Electrically sign-reversible topological Hall effect in a top-gated topological insulator (Bi,Sb)