文
论文分享
演练场
杂货铺
论文推荐
字
编辑器下载
登录
注册
M. Sakai
发表
Stress analysis of shallow trench isolation for 256 M DRAM and beyond
T. Nishimura, T. Kuroi, K. Horita, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).