T. Harp

A reliability methodology for low temperature data retention in floating gate non-volatile memories

David Burnett, A. Hoefler, R. E. Paulsen, 2001, 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167).

An application-specific usage model for flash memory read disturb reliability

R. E. Paulsen, P. J. Kuhn, T. Harp, 2001, 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167).

Statistical modeling of the program/erase cycling acceleration of low temperature data retention in floating gate nonvolatile memories

A. Hoefler, T. Harp, J. M. Higman, 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).

Effects of Fowler Nordheim tunneling stress vs. Channel Hot Electron stress on data retention characteristics of floating gate non-volatile memories

T. Harp, M. Suhail, J. Bridwell, 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).