K. H. Hwang

Highly functional and reliable 8Mb STT-MRAM embedded in 28nm logic

E. S. Jung, J. H. Lee, S. O. Park, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Highly manufacturable 7nm FinFET technology featuring EUV lithography for low power and high performance applications

E. S. Jung, K. H. Hwang, J. S. Park, 2017, 2017 Symposium on VLSI Technology.

Si FinFET based 10nm technology with multi Vt gate stack for low power and high performance applications

Y. S. Nam, J. H. Lee, K. H. Lee, 2016, 2016 IEEE Symposium on VLSI Technology.