Valery V. Afanas'ev

发表

(Invited) Optimization of WAl2O3Cu(-Te) Material Stack for High-Performance Conductive-Bridging Memory Cells

Wilfried Vandervorst, Michel Houssa, Karl Opsomer, 2013 .

Electrical characteristics of Ge/GeO x (N)/HfO 2 gate stacks

Marc Heyns, Andre Stesmans, Marc Meuris, 2005 .

Vibrational properties of epitaxial silicene layers on (111) Ag

Daniele Chiappe, Eugenio Cinquanta, Carlo Grazianetti, 2014 .

SrTiOx for sub-20nm DRAM technology nodes-Characterization and modeling

B. Kaczer, Malgorzata Jurczak, Zhigang Ji, 2015 .

Alternative techniques to reduce interface traps in n‐type 4H‐SiC MOS capacitors

Tsunenobu Kimoto, Andre Stesmans, Thomas Frank, 2008 .

Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods

Paul K. Hurley, Eamon O'Connor, Ian M. Povey, 2009 .

Interface state energy distribution and Pb defects at Si(110)/SiO2 interfaces: Comparison to (111) and (100) silicon orientations

Andre Stesmans, Valery V. Afanas'ev, A. Stesmans, 2011 .

High-resolution electron spin resonance analysis of ion bombardment induced defects in advanced low-κ insulators (κ = 2.0-2.5)

Andre Stesmans, Michel Houssa, Valery V. Afanas'ev, 2013 .

Vanadium dioxide for selector applications

Iuliana Radu, Stefan De Gendt, Marc Heyns, 2013 .

The VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition switch On-Off resistance

Iuliana Radu, Malgorzata Jurczak, Hugo Bender, 2012 .

(Invited) Internal Photoemission of Electrons from 2-Dimensional Semiconductors

Daniele Chiappe, Iuliana Radu, Cedric Huyghebaert, 2017 .

Deep electron and hole polarons and bipolarons in amorphous oxide

Alexander L. Shluger, Valery V. Afanas'ev, Jack Strand, 2016 .

Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation

Andre Stesmans, Kuan Yew Cheong, Sima Dimitrijev, 2003 .

High-k dielectrics for future generation memory devices (Invited Paper)

Christoph Adelmann, Ben Kaczer, Dirk Wouters, 2009 .

Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2/SiC interface

Leonard C. Feldman, Valery V. Afanas'ev, John Rozen, 2008 .

Internal photoemission of electrons at interfaces of metals with low-κ insulators

Guido Groeseneken, Karen Maex, Andre Stesmans, 2006 .

Comprehensive investigation of trap-assisted conduction in ultra-thin SrTiO3 layers

B. Kaczer, Dirk Wouters, Jorge Kittl, 2009 .

Trigonal paramagnetic interface defect in epitaxial Ge3N4/(111)Ge

Andre Stesmans, Valery V. Afanas'ev, A. Stesmans, 2009 .

Nature of the P b 1 interface defect in (100)Si/SiO 2 as revealed by electron spin resonance 29 Si hyperfine structure

Andre Stesmans, Valery V. Afanas'ev, 1999 .

Towards barrier height modulation in HfO2/TiN by oxygen scavenging - Dielectric defects or metal induced gap states?

L. Pantisano, Dirk Wouters, Malgorzata Jurczak, 2011 .

Electron spin resonance study of defects in low-κ oxide insulators (κ=2.5-2.0)

Andre Stesmans, Gerald Beyer, Valery V. Afanas'ev, 2011 .

Ruthenium gate electrodes on SiO2 and HfO2: Sensitivity to hydrogen and oxygen ambients

Luigi Pantisano, Tom Schram, Andre Stesmans, 2006 .

Defect-induced bandgap narrowing in low-k dielectrics

Sean W. King, Yoshio Nishi, J. L. Shohet, 2015 .

GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al2O3 gate oxide

Guy Brammertz, Matty Caymax, Clement Merckling, 2011 .