Gad Bahir

发表

Increased responsivity and detectivity in asymmetric quantum-well infrared detectors

E. Finkman, Moses T. Asom, Gabriela Livescu, 1992, Optics & Photonics.

Wave packet simulations of escape and capture probabilities in multiquantum-well infrared detectors

Yoram Betser, E. Finkman, A. Fraenkel, 1994, Optics & Photonics.

New planar process for implementation of p-on-n HgCdTe heterostructure infrared photodectors

Valery Garber, Gad Bahir, Arie Dust, 2003, SPIE Optics + Photonics.

Polarized front-illumination response in quantum dot infrared photodetectors

Michel Gendry, E. Finkman, J. Brault, 2003, SPIE Optics + Photonics.

InP-based QWIPs for long- and mid-wavelength band detection

E. Finkman, Dan Ritter, Gad Bahir, 2003, SPIE Optics + Photonics.

III-nitride intersubband photonics

Raffaele Colombelli, Anatole Lupu, Laurent Vivien, 2012, OPTO.

Electrical and structural properties of epitaxial CdTe/HgCdTe interfaces

Gad Bahir, D. Rosenfeld, Arden Sher, 1995 .

The effect of strain in InP/InGaAs quantum-well infrared photodetectors on the operating wavelength

E. Finkman, Dan Ritter, Gad Bahir, 2001 .

Quantum dot infrared photodetectors in new material systems

Michel Gendry, E. Finkman, Francois H. Julien, 2000 .

Compositionally graded HgCdTe photodiodes: Prediction of spectral response from transmission spectrum and the impact of grading

Gad Bahir, D. Rosenfeld, D. Rosenfeld, 1995 .

Electrical properties of epitaxially grown CdTe passivation for long‐wavelength HgCdTe photodiodes

Gad Bahir, D. Rosenfeld, Arden Sher, 1994 .

A model for the trap-assisted tunneling mechanism in diffused n-p and implanted n/sup +/-p HgCdTe photodiodes

Gad Bahir, D. Rosenfeld, D. Rosenfeld, 1992 .

Photocurrent spectroscopy of intersubband transitions in GaInAsN/(Al)GaAs asymmetric quantum well infrared photodetectors

Asaf Albo, Gad Bahir, Dan Fekete, 2012 .

Investigation of epitaxial P-p CdTe/Hg0.775Cd0.225Te heterojunctions by capacitance-voltage profiling

Gad Bahir, Arden Sher, V. Garber, 1995 .

High-speed operation of GaN/AlGaN quantum cascade detectors at λ≈1.55 μm

Paul Crozat, Raffaele Colombelli, Laurent Vivien, 2008 .

Characterization of a new planar process for implementation of p-on-n HgCdTe heterostructure infrared photodiodes

Gad Bahir, V. Garber, G. Bahir, 2001 .

Surface states and persistent photocurrent in a GaN heterostructure field effect transistor

Gad Bahir, A. Horn, O. Katz, 2006 .

Polarized front-illumination response in intraband quantum dot infrared photodetectors at 77 K

Michel Gendry, E. Finkman, Francois H. Julien, 2001 .

Measured and calculated radiative lifetime and optical absorption of In x Ga 1 − x N / G a N quantum structures

Larry A. Coldren, Doron Shilo, S. P. DenBaars, 2000 .

Lifetime and carrier‐concentration profile of B+‐implanted p‐type HgCdTe

E. Finkman, A. Fraenkel, Gad Bahir, 1986 .

GaN/AlGaN waveguide quantum cascade photodetectors at λ ≈ 1.55 μm with enhanced responsivity and ∼40 GHz frequency bandwidth

Paul Crozat, Laurent Vivien, N. Isac, 2013 .

Room temperature demonstration of GaN∕AlN quantum dot intraband infrared photodetector at fiber-optics communication wavelength

Francois H. Julien, Maria Tchernycheva, Eva Monroy, 2006 .

Electron mobility in an AlGaN/GaN two-dimensional electron gas. I. Carrier concentration dependent mobility

Joseph Salzman, Gad Bahir, G. Bahir, 2003 .

Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors

Shuji Nakamura, E. Gross, S. E. Schacham, 2013 .

Optical Spectroscopy of InGaN/GaN Quantum Wells

Larry A. Coldren, S. P. DenBaars, Gad Bahir, 1999 .

ELECTRONIC PROPERTIES OF METAL/SOL-GEL SIO2/INDIUM-PHOSPHODE CAPACITOR

Gad Bahir, Y. Shacham-Diamand, N. Moriya, 1991 .

Femto-second electron transit time characterization in GaN/AlGaN quantum cascade detector at 1.5 micron

Maria Tchernycheva, S. Sakr, Eva Monroy, 2011 .