Daigo Kikuta

发表

High-Temperature Stability of Copper-Gate AlGaN/GaN High Electron Mobility Transistors

Yasuo Ohno, Yoshiki Naoi, Jin-Ping Ao, 2003 .

A Mechanism of Enhancement-Mode Operation of AlGaN/GaN MIS-HFET

Yasuo Ohno, Jin-Ping Ao, Daigo Kikuta, 2006, IEICE Trans. Electron..

Temperature and Illumination Dependence of AlGaN/GaN HFET Threshold Voltage

Yasuo Ohno, Jin-Ping Ao, Masaya Okada, 2006, IEICE Trans. Electron..

Evaluation of Surface States of AlGaN/GaN HFET Using Open-Gated Structure

Yasuo Ohno, Jin-Ping Ao, Daigo Kikuta, 2005, IEICE Trans. Electron..

Experimental validation of newly fabricated normally-on GaN high-electron-mobility transistor

Tetsu Kachi, Masayuki Okamoto, Eiji Hiraki, 2013, 2013 IEEE Energy Conversion Congress and Exposition.