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Record power added efficiency, low voltage GOI (GaAs On Insulator) MESFET technology for wireless applications

Umesh K. Mishra, Primit Parikh, J. Ibbetson, 1998, IMS 1998.

Full two-port on-wafer vector network analysis to 120 GHz using active probes

Mark J. W. Rodwell, M. Reddy, M. Case, 1993, 1993 IEEE MTT-S International Microwave Symposium Digest.

Millimeter-wave on-wafer waveform and network measurements using active probes

Mark J. W. Rodwell, M. Case, S. T. Allen, 1994 .

8-96 GHz on-wafer network analysis

Mark J. W. Rodwell, Y. Konishi, M. Kamegawa, 1992, GaAs IC Symposium Technical Digest 1992.

Record power-added efficiency using GaAs on insulator MESFET technology

T. Jenkins, L. Kehias, J. Ibbetson, 1998, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260).