Andreas Rosenauer

发表

The effect of probe inaccuracies on the quantitative model-based analysis of high angle annular dark field scanning transmission electron microscopy images.

J. Verbeeck, S. Van Aert, A. De Backer, 2014, Micron.

Computation and parametrization of the temperature dependence of Debye-Waller factors for group IV, III-V and II-VI semiconductors.

D. Lamoen, M. Schowalter, John John Titantah, 2009, Acta crystallographica. Section A, Foundations of crystallography.

Determination of the mean inner potential in III-V semiconductors, Si and Ge by density functional theory and electron holography.

D. Gerthsen, D. Lamoen, A. Rosenauer, 2006, Ultramicroscopy.

Determination of the mean inner potential in III-V semiconductors by electron holography.

D. Gerthsen, A. Rosenauer, P. Kruse, 2003, Ultramicroscopy.

Steam reforming of methanol over oxide decorated nanoporous gold catalysts: a combined in situ FTIR and flow reactor study.

M. Bäumer, M. Murshed, T. Gesing, 2017, Physical chemistry chemical physics : PCCP.

Atom counting in HAADF STEM using a statistical model-based approach: methodology, possibilities, and inherent limitations.

S. Van Aert, A. De Backer, G. Martinez, 2013, Ultramicroscopy.

Quantitative composition determination at the atomic level using model-based high-angle annular dark field scanning transmission electron microscopy.

S Van Aert, J. Verbeeck, S. Van Aert, 2014, Ultramicroscopy.

Strain, composition and disorder in ADF imaging of semiconductors

V. Grillo, F. Glas, K. Volz, 2011 .

GaN atomic electric fields from a segmented STEM detector: Experiment and simulation.

F. Krause, T. Mehrtens, M. Schowalter, 2024, Journal of microscopy.

A pnCCD-based, fast direct single electron imaging camera for TEM and STEM

P. Kotula, R. Hartmann, P. Holl, 2016 .

Temperature-dependent Debye-Waller factors for semiconductors with the wurtzite-type structure.

J. Titantah, D. Lamoen, M. Schowalter, 2009, Acta crystallographica. Section A, Foundations of crystallography.