M. Gros-Jean

Aluminum charge/dipole passivation induced by hydrogen diffusion in high-k metal gate

D. Petit, G. Ribes, V. Barral, 2014, 2014 IEEE International Reliability Physics Symposium.

Investigation of the impact of the oxide thickness and RESET conditions on disturb in HfO2-RRAM integrated in a 65nm CMOS technology

S. Jeannot, V. Jousseaume, M. Gros-Jean, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

Gate stack solutions in gate-first FDSOI technology to meet high performance, low leakage, VT centering and reliability criteria

X. Garros, J. Mazurier, M. Rafik, 2016, 2016 IEEE Symposium on VLSI Technology.

Voltage pulse stress effect on gate stack TDDB distributions at nanometric scale: Consequence on aging by ESD

M. Gros-Jean, S. Blonkowski, R. Foissac, 2014, 2014 IEEE International Reliability Physics Symposium.