Katsuya Samonji

High-power operation of a wide-striped InGaN laser diode array

Shinji Yoshida, Katsuya Samonji, Hiroyuki Hagino, 2012, OPTO.

Amorphous Si crystallization by 405-nm GaN laser diodes for high-performance TFT applications: advantages of using 405-nm wavelength

Masaaki Yuri, Nobuyasu Suzuki, Xinbing Liu, 2012, Other Conferences.

Control of N Content of GaPN Grown by Molecular Beam Epitaxy and Growth of GaPN Lattice Matched to Si(100) Substrate

Yuzo Furukawa, Yasuhiro Fujimoto, Katsuya Samonji, 2002 .

6.3W InGaN laser diode array with highly efficient wide-striped emitters

Katsuya Samonji, H. Hagino, K. Yamanaka, 2011, IEEE Photonic Society 24th Annual Meeting.