D.S. Woo

High-density low-power-operating DRAM device adopting 6F/sup 2/ cell scheme with novel S-RCAT structure on 80nm feature size and beyond

Y.S. Lee, J.M. Park, J.H. Kim, 2005, Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..

The excellent scalability of the RCAT (recess-channel-array-transistor) technology for sub-70nm DRAM feature size and beyond

H.J. Kim, Kinam Kim, H.S. Kim, 2005, IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech)..

S-RCAT (sphere-shaped-recess-channel-array transistor) technology for 70nm DRAM feature size and beyond

H.J. Kim, Kinam Kim, Y.S. Lee, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..