Zhixin Qin

发表

Effects of symmetry of GaN-based two-dimensional photonic crystal with quasicrystal lattices on enhancement of surface light extraction

Z. J. Yang, Dapeng Yu, Z. Qin, 2006 .

The Ga-Nitride/air Two-Dimensional Photonic Quasi-crystals Fabricated on GaN-based Light Emitters

Xiaodong Hu, Guoyi Zhang, Jun Xu, 2004 .

Control of dislocations in heteroepitaxial AlN films by extrinsic supersaturated vacancies introduced through thermal desorption of heteroatoms

Z. Qin, W. Ge, Fujun Xu, 2021 .

Realization of high efficiency AlGaN-based multiple quantum wells grown on nano-patterned sapphire substrates

Z. Qin, W. Ge, N. Zhang, 2020 .

Study of moiré fringes at the interface of GaN/α-Al2O3 (0001)

R. Zhang, B. Shen, Z. Qin, 2002 .

Thermally annealed wafer-scale h-BN films grown on sapphire substrate by molecular beam epitaxy

J. J. Yang, S. F. Liu, F. Liu, 2020 .

Stress evolution in AlN growth on nano-patterned sapphire substrates

W. Ge, N. Zhang, B. Shen, 2019, Applied Physics Express.

282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates

Chong Geng, Junxi Wang, Jinmin Li, 2013 .

Self‐Powered, Ultrafast, Visible‐Blind UV Detection and Optical Logical Operation based on ZnO/GaN Nanoscale p‐n Junctions

L. Dai, Z. Liao, Hongzhou Zhang, 2011, Advanced materials.

Al-rich AlGaN semiconductor materials and their device applications

Dunjun Chen, L. Sang, Z. Qin, 2019, Ultra-Wide Bandgap Semiconductor Materials.

Tunneling induced electron transfer in SiNx/AlGaN/GaN based metal–insulator–semiconductor structures

Feng Xu, Z. J. Yang, Maojun Wang, 2007 .

Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy

Mo Li, M. Albrecht, Mathias Müller, 2017, Scientific Reports.

Strain effect on polarized optical properties of c ‐plane GaN and m ‐plane GaN

Zhizhong Chen, Z. Qin, Guoyi Zhang, 2009 .

Progress in efficient doping of Al-rich AlGaN

Xuelin Yang, Bo Shen, Xinqiang Wang, 2024, Journal of Semiconductors.

High‐Output‐Power Ultraviolet Light Source from Quasi‐2D GaN Quantum Structure

V. Kozlovsky, M. Albrecht, Z. Qin, 2016, Advanced materials.

Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells

Y. H. Chen, G. Chen, L. Sang, 2015, Scientific Reports.

Atomically flat (0 0 1)GaAs surface prepared by two-step atomic-hydrogen treatment and its application to heteroepitaxy of GaN

Kiyoshi Takahashi, H. Nagano, A. Yoshikawa, 1998 .

High-resolution X-ray diffraction analysis of cubic GaN grown on (0 0 1)GaAs by RF-radical source molecular beam epitaxy

Kiyoshi Takahashi, H. Nagano, Z. Qin, 1998 .

X-ray diffraction reciprocal space and pole figure characterization of cubic GaN epitaxial layers grown on (0 0 1) GaAs by molecular beam epitaxy

Z. Qin, A. Yoshikawa, M. Kobayashi, 1999 .

Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

Jie Zhang, Ning Tang, Chenguang He, 2016, Scientific Reports.

Group-III nitride heteroepitaxial films approaching bulk-class quality

W. Ge, N. Tang, X. Kang, 2023, Nature Materials.

Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes

Z. Qin, Xianbin Li, Xue-Peng Wang, 2020, Advanced science.

Period size effect induced crystalline quality improvement of AlN on a nano-patterned sapphire substrate

Xiaodong Wang, Z. Qin, W. Ge, 2019, Japanese Journal of Applied Physics.

High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition

Z. Qin, Fujun Xu, B. Shen, 2017, Scientific Reports.

Positive temperature coefficient of photovoltaic efficiency in solar cells based on InGaN/GaN MQWs

Xiaodong Wang, Z. Qin, W. Ge, 2016 .

Graphene‐Assisted Epitaxy of Nitrogen Lattice Polarity GaN Films on Non‐Polar Sapphire Substrates for Green Light Emitting Diodes

Z. Qin, Fujun Xu, B. Shen, 2020, Advanced Functional Materials.

Mechanical properties of AlxGa1−xN films with high Al composition grown on AlN/sapphire templates

Z. J. Yang, Z. Qin, G. Y. Zhang, 2007 .

Influence of applied electric fields on the absorption coefficient and subband energy distances of intersubband transitions in AlN/GaN coupled double quantum wells

Z. Qin, G. Y. Zhang, B. Shen, 2008 .