J. M. Benedetto

Single event effects and prompt dose hardness of a deep submicron commercial process

J. M. Benedetto, 2002, IEEE Radiation Effects Data Workshop.

Ionizing radiation response of an amorphous silicon based antifuse

J. M. Benedetto, C. C. Hafer, 1997, 1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference.

High total dose response of the UTMC gate array fabricated at Lockheed Martin Federal Systems

A. Bishop, J. M. Benedetto, N. Haddad, 1998, 1998 IEEE Radiation Effects Data Workshop. NSREC 98. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.98TH8385).

The Effect of Ionizing Radiation on the Breakdown Voltage of Power MOSFETS

D. L. Blackburn, K. F. Galloway, J. M. Benedetto, 1983, IEEE Transactions on Nuclear Science.

Neutron irradiation effects on PZT thin films for nonvolatile-memory applications

Randall A Moore, J. M. Benedetto, R. A. Moore, 1991 .

Single event upset immunity of strontium bismuth tantalate ferroelectric memories

J. M. Benedetto, G. F. Derbenwick, J. D. Cuchiaro, 1999 .

Hole Removal in Thin-Gate MOSFETs by Tunneling

H. E. Boesch, J. M. Benedetto, J. Mize, 1985, IEEE Transactions on Nuclear Science.

Post-Irradiation Effects in Field-Oxide Isolation Structures

H. E. Boesch, J. M. Benedetto, T. R. Oldham, 1987, IEEE Transactions on Nuclear Science.

Ionizing Radiation Effects on Power MOSFETS during High Speed Switching

D. L. Blackburn, K. F. Galloway, J. M. Benedetto, 1982, IEEE Transactions on Nuclear Science.

Radiation evaluation of commercial ferroelectric nonvolatile memories

M. Brassington, C. W. Tipton, J. M. Benedetto, 1991 .

Dose and energy dependence of interface trap formation in cobalt-60 and X-ray environments

H. E. Boesch, J. M. Benedetto, J. Benedetto, 1988 .

Time dependent annealing of radiation-induced leakage currents in MOS devices

J. M. Benedetto, T. R. Oldham, J. Benedetto, 1989 .