K. Mochizuki

20mΩcm2660V Super Junction MOSFETs Fabricated by Deep Trench Etching and Epitaxial Growth

K. Takahashi, H. Kuribayashi, T. Kawashima, 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.

Active surge voltage clamped 600 A IPM for high power application

K. Mochizuki, Gourab Majumdar, T. Hiramoto, 1995, Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95.

Above 500V class Superjunction MOSFETs fabricated by deep trench etching and epitaxial growth

K. Takahashi, H. Kuribayashi, S. Wakimoto, 2005, Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..

New reverse-conducting IGBT (1200V) with revolutionary compact package

Y. Ikeda, Y. Kobayashi, O. Ikawa, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Relation of insulation resistance and deteriorated ratio of reference voltage of oil-immersed surge arrester elements enclosed in pole transformers

Shingo Shirakawa, K. Mochizuki, Kaoru Araki, 1998 .

Development of 6.5 kV class IGBT with wide safety operation area

K. Mochizuki, K. Satoh, S. Iura, 2002, Proceedings of the Power Conversion Conference-Osaka 2002 (Cat. No.02TH8579).