D. R. Young

Introductory lecture on low-temperature storage and switching devices

D. R. Young, 1959 .

Identification of electron traps in thermal silicon dioxide films

D. R. Young, Allan M. Hartstein, A. Hartstein, 1981 .

Use of electron‐trapping region to reduce leakage currents and improve breakdown characteristics of MOS structures

D. W. Ormond, D. R. Young, D. J. DiMaria, 1977 .

Electron Injection Studies of Radiation Induced Positive Charge in MOS Devices

D. R. Young, J. M. Aitken, J. Aitken, 1976, IEEE Transactions on Nuclear Science.

Avalanche Injection of Holes into SiO2

D. R. Young, J. M. Aitken, J. Aitken, 1977, IEEE Transactions on Nuclear Science.

High temperature annealing behavior of electron traps in thermal SiO2

D. R. Young, P. Balk, P. Balk, 1984 .

Electron trapping in SiO2 at 295 and 77 °K

Hisham Z. Massoud, Eugene A. Irene, D. R. Young, 1979 .

Charge trapping in ion-sputtered silicon dioxide films on silicon

D. R. Young, J. D. Zook, R. B. Sethi, 1990 .